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Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun.Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector. Acta Physica Sinica, 2017, 66(19): 198502.doi:10.7498/aps.66.198502 |
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Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei.Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions. Acta Physica Sinica, 2017, 66(24): 246102.doi:10.7498/aps.66.246102 |
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Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin.Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501.doi:10.7498/aps.63.118501 |
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Ding Wei, Wu Wen-Wen, Wang Chi, Wu Zhi-Qiang.Propagation characteristics of seismic waves in shallow soil with the unsaturated three-phase poroelastic model. Acta Physica Sinica, 2014, 63(22): 224301.doi:10.7498/aps.63.224301 |
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica, 2013, 62(15): 158502.doi:10.7498/aps.62.158502 |
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Zhang Yue, Zhuo Qing-Qing, Liu Hong-Xia, Ma Xiao-Hua, Hao Yue.Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2013, 62(16): 167305.doi:10.7498/aps.62.167305 |
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Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang.Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET. Acta Physica Sinica, 2012, 61(21): 217304.doi:10.7498/aps.61.217304 |
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Yang Jin-Hui, Song Jun-Qiang.Saturation property of mean growth of initial error for chaos systems. Acta Physica Sinica, 2012, 61(17): 170511.doi:10.7498/aps.61.170511 |
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Qiu Wei, Lü Pin, Ma Ying-Chi, Xu Xiao-Juan, Liu Dian, Zhang Cheng-Hua.The research on saturation of fast light in homogeneously broaden materials with gain. Acta Physica Sinica, 2012, 61(10): 104209.doi:10.7498/aps.61.104209 |
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Cao Lei, Liu Hong-Xia.Study of the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Acta Physica Sinica, 2012, 61(24): 247303.doi:10.7498/aps.61.247303 |
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Xiao Zhi-Qiang, Li Lei-Lei, Zhang Bo, Xu Jing, Chen Zheng-Cai.Total dose characteristics of single poly EEPROM and SONOS EEPROM on SOI. Acta Physica Sinica, 2011, 60(2): 028502.doi:10.7498/aps.60.028502 |
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Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu.A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET. Acta Physica Sinica, 2011, 60(5): 058501.doi:10.7498/aps.60.058501 |
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Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng.Study on power characteristics of deep sub-micron SOI RF LDMOS. Acta Physica Sinica, 2011, 60(1): 018501.doi:10.7498/aps.60.018501 |
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo.Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136.doi:10.7498/aps.59.8131 |
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Yu Yun, Hui Jun-Ying, Chen Yang, Sun Guo-Cang, Teng Chao.Research on target depth classification in low frequency acoustic field of shallow water. Acta Physica Sinica, 2009, 58(9): 6335-6343.doi:10.7498/aps.58.6335 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin.The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFET. Acta Physica Sinica, 2008, 57(7): 4476-4481.doi:10.7498/aps.57.4476 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong.2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2008, 57(6): 3807-3812.doi:10.7498/aps.57.3807 |
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Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |
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LAI YUN-ZHONG, LI WEI-DONG, LIANG JIU-QING.ADIABATIC TRANSITION TRANSFER PHENOMENON OF ELECTRONS AND THE QUANTUM STATISTICAL PROPERTIES OF LIGHT FIELD IN A KERR MEDIUM. Acta Physica Sinica, 1998, 47(9): 1489-1497.doi:10.7498/aps.47.1489 |
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.ОБ ИССЛЕДОВАНИИ СТАТИЧЕСКИХ ВОЛЬТАМПЕРНЫХ ХАРАКТЕРИСИК ТРАНЗИСТОРОВ В ОБЛАСТИ НАСЫЩЕНИЯ. Acta Physica Sinica, 1964, 20(6): 550-567.doi:10.7498/aps.20.550 |
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