[1] |
Li Jin-Jin, Li Duo-Sheng, Hong Yue, Zou Wei, He Jun-Jie.Growth of graphene on Al2O3 (0001) surface. Acta Physica Sinica, 2017, 66(21): 217101.doi:10.7498/aps.66.217101 |
[2] |
Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren.Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica, 2017, 66(1): 017501.doi:10.7498/aps.66.017501 |
[3] |
Deng Fa-Ming.Effect of intense laser irradiation on the electronic properties of 6H-SiC. Acta Physica Sinica, 2016, 65(10): 107101.doi:10.7498/aps.65.107101 |
[4] |
Du Yang-Yang, Li Bing-Sheng, Wang Zhi-Guang, Sun Jian-Rong, Yao Cun-Feng, Chang Hai-Long, Pang Li-Long, Zhu Ya-Bin, Cui Ming-Huan, Zhang Hong-Peng, Li Yuan-Fei, Wang Ji, Zhu Hui-Ping, Song Peng, Wang Dong.Spectra study of He-irradiation induced defects in 6H-SiC. Acta Physica Sinica, 2014, 63(21): 216101.doi:10.7498/aps.63.216101 |
[5] |
Yun Zhi-Qiang, Wei Ru-Sheng, Li Wei, Luo Wei-Wei, Wu Qiang, Xu Xian-Gang, Zhang Xin-Zheng.Sub-diffraction-limit fabrication of 6H-SiC with femtosecond laser. Acta Physica Sinica, 2013, 62(6): 068101.doi:10.7498/aps.62.068101 |
[6] |
Li Li-Min, Pan Hai-Bin, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang, Chen Xiu-Fang, Xu Xian-Gang, Kang Chao-Yang, Tang Jun.Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures. Acta Physica Sinica, 2011, 60(4): 047302.doi:10.7498/aps.60.047302 |
[7] |
Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei.Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica, 2010, 59(9): 6390-6393.doi:10.7498/aps.59.6390 |
[8] |
Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica, 2009, 58(5): 3443-3447.doi:10.7498/aps.58.3443 |
[9] |
Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287.doi:10.7498/aps.58.7282 |
[10] |
Tang Chao, Ji Lu, Meng Li-Jun, Sun Li-Zhong, Zhang Kai-Wang, Zhong Jian-Xin.Growth of graphene structure on 6H-SiC(0001): Molecular dynamics study. Acta Physica Sinica, 2009, 58(11): 7815-7820.doi:10.7498/aps.58.7815 |
[11] |
Wu Yu-Yu, Chen Shi, Gao Xin-Yu, Andrew Thye Shen Wee, Xu Peng-Shou.Synchrotron radiation angle-resolved photoelectron spectroscopy studies of 6H-SiC(0001)-6[KF(]3[KF)]×6[KF(]3[KF)] R30° surface. Acta Physica Sinica, 2009, 58(6): 4288-4294.doi:10.7498/aps.58.4288 |
[12] |
Yang Chun, Li Yan-Rong, Yan Qi-Li, Liu Yong-Hua.Effects of atomic defects of α-Al2O3(0001) on ZnO adsorption. Acta Physica Sinica, 2005, 54(5): 2364-2368.doi:10.7498/aps.54.2364 |
[13] |
Li Zhen-Sheng, Cheng Juan, Wang Zhi-Hua, Luo Shi-Rong, Yang Jing-Guo.Investigation of amplification characteristics of SRS in acetone enhanced by DCM dye fluorescence. Acta Physica Sinica, 2005, 54(9): 4164-4168.doi:10.7498/aps.54.4164 |
[14] |
Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi.Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica, 2004, 53(11): 3710-3715.doi:10.7498/aps.53.3710 |
[15] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |
[16] |
Yang Chun, Li Yan-Rong, Xue Wei-Dong, Tao Bai-Wan, Liu Xing-Zhao, Zhang Ying, Huang Wei.Study on the structure and energy of the (0001) surface of α-Al2O3 substrate. Acta Physica Sinica, 2003, 52(9): 2268-2273.doi:10.7498/aps.52.2268 |
[17] |
Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan.A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2003, 52(10): 2553-2557.doi:10.7498/aps.52.2553 |
[18] |
WANG YU-XIA, GUO ZHEN, HE HAI-PING, CAO YING, TANG HONG-GUO.EPITAXIAL GROWTH OF (0001)ORIENTED 6H-SiC FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING. Acta Physica Sinica, 2001, 50(2): 256-261.doi:10.7498/aps.50.256 |
[19] |
SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING.MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC. Acta Physica Sinica, 2000, 49(9): 1786-1791.doi:10.7498/aps.49.1786 |
[20] |
Chen Qun-qi; Lin Zhang-da; Ji Shang-xue;Xie Kan; Chang Ying-zhuan;Hou De-sen;Wang Tai-hong.STUDIES ON UPS AND XPS OF 0_2_ AND H_2_0 ABSORPTION ON SURFACES OF SrTi0_3_. Acta Physica Sinica, 1987, 36(8): 1075-1080.doi:10.7498/aps.36.1075 |