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Wu Yang, Hu Xiao, Liu Bo-Wen, Gu Yi, Zha Fang-Xing.Different spectral features near the energy bandgaps of normal and inverse heterostructures of In0.52Al0.48As/InP. Acta Physica Sinica, 2024, 73(2): 027801.doi:10.7498/aps.73.20231339 |
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Sun Peng-Fei, Zhu Ke-Jian, Xu Peng-Fei, Liu Xing-Peng, Sun Tang-You, Li Hai-Ou, Zhou Zhi-Ping.Experimental research on ultracompact silicon hybrid plasmonic nanofocusing device. Acta Physica Sinica, 2022, 71(19): 196201.doi:10.7498/aps.71.20212340 |
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Xu Jia-Ling, Jia Li-Yun, Liu Chao, Wu Quan, Zhao Ling-Jun, Ma Li, Hou Deng-Lu.Band structure of topological insulator Li(Na)AuS. Acta Physica Sinica, 2021, 70(2): 027101.doi:10.7498/aps.70.20200885 |
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Liu Liang, Han De-Zhuan, Shi Lei.Plasmonic band structures and its applications. Acta Physica Sinica, 2020, 69(15): 157301.doi:10.7498/aps.69.20200193 |
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Shen Dan-Ping, Zhang Xiao-Dong, Sun Yan, Kang Ting-Ting, Dai Ning, Chu Jun-Hao, Yu Guo-Lin.Magnetotransport property of negative band gap HgCdTe bulk material. Acta Physica Sinica, 2017, 66(24): 247301.doi:10.7498/aps.66.247301 |
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Feng Song, Xue Bin, Li Lian-Bi, Zhai Xue-Jun, Song Li-Xun, Zhu Chang-Jun.Analysis of Si/SiGe/Si double heterojunction band of a novelstructure of PIN electronic modulation. Acta Physica Sinica, 2016, 65(5): 054201.doi:10.7498/aps.65.054201 |
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Zou Jun-Hui, Zhang Juan.Photonic bandgap compensation and extension for hybrid quasiperiodic heterostructures. Acta Physica Sinica, 2016, 65(1): 014214.doi:10.7498/aps.65.014214 |
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Wang Wen-Juan, Wang Hai-Long, Gong Qian, Song Zhi-Tang, Wang Hui, Feng Song-Lin.External electric field effect on exciton binding energy in InGaAsP/InP quantum wells. Acta Physica Sinica, 2013, 62(23): 237104.doi:10.7498/aps.62.237104 |
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Zhou Shou-Li, Li Jia, Ren Hong-Liang, Wen Hao, Peng Yin-Sheng.The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(17): 178501.doi:10.7498/aps.62.178501 |
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Duan Zi-Gang, Huang Xiao-Dong, Zhou Ning, Xu Guang-Hui, Chai Guang-Yue.Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser. Acta Physica Sinica, 2010, 59(9): 6193-6199.doi:10.7498/aps.59.6193 |
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Yao Fei, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.Band gap Narrowing in heavily B doped Si1-xGex strained layers. Acta Physica Sinica, 2007, 56(11): 6654-6659.doi:10.7498/aps.56.6654 |
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Ma Xiao-Tao, Zheng Wan-Hua, Ren Gang, Fan Zhong-Chao, Chen Liang-Hui.Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal. Acta Physica Sinica, 2007, 56(2): 977-981.doi:10.7498/aps.56.977 |
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Quan Zhi-Jue, Sun Li-Zhong, Ye Zhen-Hua, Li Zhi-Feng, Lu Wei.Optimization design of the band profiles of HgCdTe heterojunctions. Acta Physica Sinica, 2006, 55(7): 3611-3616.doi:10.7498/aps.55.3611 |
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei.Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica, 2006, 55(10): 5216-5220.doi:10.7498/aps.55.5216 |
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Xu Zhang-Cheng, Jia Guo-Zhi, Sun Liang, Yao Jiang-Hong, Xu Jing-Jun, J. M. Hvam, Wang Zhan-Guo.Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures. Acta Physica Sinica, 2005, 54(11): 5367-5371.doi:10.7498/aps.54.5367 |
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CHEN JIAN-XIN, LI AI-ZHEN, REN YAO-CHENG, K.FRIEDLAND.SHUBNIKOV-DE HAAS OSCILLATIONS IN PSEUDOMORPHIC MODULATION-DOPED InGaAs/InAlAs HETEROSTRUCTURE. Acta Physica Sinica, 1998, 47(5): 796-801.doi:10.7498/aps.47.796 |
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LI JIN-MIN, GUO LI-HUI, HOU XUN.THEORETICAL CALCULATION OF QUANTUM EFFICIENCY FOR FIELD-ASSISTED InP/InGaAsP SEMICONDUCTOR PHOTOCATHODES. Acta Physica Sinica, 1992, 41(10): 1672-1678.doi:10.7498/aps.41.1672 |
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WANG QI-MING, ZHU LONG-DE, CAO QI-PING.A BISTABLE InGaA8P/InP DH LASER WITH INTERNAL MODULATION ON Q FACTOR FORMED BY PROTON BOMBARDMENT. Acta Physica Sinica, 1985, 34(8): 1102-1106.doi:10.7498/aps.34.1102 |
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WANG DE-NING, CHAO SUO-SHUN.AN INVESTIGATION OF DYNAMIC CHARACTERISTIC FOR THE BURIED CRESCENT InGaAsP/InP LASER. Acta Physica Sinica, 1984, 33(5): 602-611.doi:10.7498/aps.33.602 |
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YANG YU-FEN.A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE. Acta Physica Sinica, 1981, 30(6): 794-801.doi:10.7498/aps.30.794 |