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Zhou Mei, Zhao De-Gang.Barrier and well thickness designing of InGaN/GaN multiple quantum well for better performances of GaN based laser diode. Acta Physica Sinica, 2016, 65(7): 077802.doi:10.7498/aps.65.077802 |
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Tang Bin, Cao Chao, Yin Wei, Sun Yong, Liu Bin.Neutron holography simulation based on different sample rotations. Acta Physica Sinica, 2015, 64(24): 242801.doi:10.7498/aps.64.242801 |
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Yang Shuang-Bo.Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well. Acta Physica Sinica, 2014, 63(5): 057301.doi:10.7498/aps.63.057301 |
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Wang Wen-Juan, Wang Hai-Long, Gong Qian, Song Zhi-Tang, Wang Hui, Feng Song-Lin.External electric field effect on exciton binding energy in InGaAsP/InP quantum wells. Acta Physica Sinica, 2013, 62(23): 237104.doi:10.7498/aps.62.237104 |
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Yang Shuang-Bo.Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica, 2013, 62(15): 157301.doi:10.7498/aps.62.157301 |
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Yang Yong-Fu, Fu Rong-Guo, Ma Li, Wang Xiao-Hui, Zhang Yi-Jun.Effect of surface potential barrier on quantum efficiency decay of reflection-mode GaN photocathode. Acta Physica Sinica, 2012, 61(12): 128504.doi:10.7498/aps.61.128504 |
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Zheng Yu-Jun, Xu Xian-Gang, Ji Zi-Wu, Lu Yun.Interface structure effects on optical property of undoped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica, 2010, 59(11): 7986-7990.doi:10.7498/aps.59.7986 |
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Wang Li, Zhang Xiao-An, Yang Zhi-Hu, Chen Xi-Meng, Zhang Hong-Qiang, Cui Ying, Shao Jian-Xiong, Xu Xu.The coulomb potential energy effect on the intensity of the characteristic lines at highly charged ion incendence on Al surface. Acta Physica Sinica, 2008, 57(1): 137-142.doi:10.7498/aps.57.137 |
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