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Abstract
Synchrotron radiation photoelectron spectroscopy (SRPES) combined with scanning electron microscopy (SEM) and gravimetric method is used to study the neutralized (NH4)2S-passivated GaAs(100) surfaces- Compared to the conventional (NH4)2S alkaline solution treatment, a thicker Ga sulfide layer and stronger Ga—S bonding on GaAs surface can be formed by dipping GaAs in neutralized (NH4)2S solution- Gravimetric data show that the etching rate of GaAs in neutralized (NH4)2S solution is about 15% lower than that in the conventional (NH4)2S solution- From SEM observation, only fewer number of etching pits with smaller size on the neutralized (NH4)2S treated GaAs surfaces can be found-
Authors and contacts
YUAN ZE-LIANG¹,

DING XUN-MIN¹,

HU HAI-TIAN¹,

LI ZHE-SHEN¹,

YANG JIAN-SHU¹,

MIAO XI-YUE¹,

CHEN XI-YING¹,

CAO XIAN-AN¹,

HOU XIAO-YUAN¹,

LU ER-DONG²,

XU SHI-HONG²,

XU PENG-SHOU²,

ZHANG XIN-YI²
References

Cited By

[1]	Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo.First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica, 2018, 67(16): 166401.doi:10.7498/aps.67.20180626
[2]	Zhang Yong, Shi Yi-Min, Bao You-Zhen, Yu Xia, Xie Zhong-Xiang, Ning Feng.Effect of surface passivation on the electronic properties of GaAs nanowire:A first-principle study. Acta Physica Sinica, 2017, 66(19): 197302.doi:10.7498/aps.66.197302
[3]	Zhang Fa－pei, Guo Hong－zhi, Xu Peng－shou, Zhu Chuan－gang, Lu Er－dong, Zhang Xin－yi, Liang Ren－you.Interface Formation Between Co With S－Passivated GaAs(100)　　 　　　　. Acta Physica Sinica, 2000, 49(1): 142-145.doi:10.7498/aps.49.142
[4]	WU DI, LIU GUO-LEI, WU YI-ZHENG, DONG GUO-SHENG, JIN XIAO-FENG, SHEN XIAO-LIANG.EPITAXIAL STRUCTURES AND MAGNETIC PROPERTIES OF Co100-xMnx ALLOYS ON GaAs(001) SURFACE. Acta Physica Sinica, 1999, 48(12): 2320-2326.doi:10.7498/aps.48.2320
[5]	HU HAI-TIAN, LAI BING, YUAN ZE-LIANG, DING XUN-MIN, HOU XIAO-YUAN.NITRIDATION OF K/GaAs(100) SURFACES. Acta Physica Sinica, 1998, 47(6): 1041-1046.doi:10.7498/aps.47.1041
[6]	ZOU YA-MING, T.KAMBARA, Y.KANAI, Y.AWAYA, C.P.BHALLA.2s AND 2p VACANCY PRODUCTION PROCESS OF SWIFT Ar ION IN SOLID. Acta Physica Sinica, 1997, 46(1): 49-55.doi:10.7498/aps.46.49
[7]	LU ER-DONG, ZHANG FA-PEI, YU XIAO-JIANG, XU SHI-HONG, XU FA-QIANG, PAN HAI-BIN, HAN ZHENG-FU, XU PENG-SHOU, ZHANG XIN-YI.SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT. Acta Physica Sinica, 1997, 46(5): 1022-1027.doi:10.7498/aps.46.1022
[8]	LU ER-DONG, XU PENG-SHOU, YU XIAO-JIANG, XU SHI-HONG, PAN HAI-BIN, ZHANG XIN-YI.A NEW METHOD:CH3CSNH2/NH4OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION. Acta Physica Sinica, 1996, 45(4): 715-720.doi:10.7498/aps.45.715
[9]	Chen Wei-De, Jin Gao-Long, Cui Yu-De, Duan Li-Hong, Gao Zhi-Qiang.. Acta Physica Sinica, 1995, 44(8): 1328-1334.doi:10.7498/aps.44.1328
[10]	WEI XING, GONG DA-WEI, YANG XIAO-PING, LU HONG-QIANG, CUI QIAN, SHENG CHI, ZHANG XIANG-JIU, WANG XUN, WANG QIN-HUA, LU FANG, SUN HENG-HUI.ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE. Acta Physica Sinica, 1993, 42(12): 1968-1973.doi:10.7498/aps.42.1968
[11]	ZHANG MING, DONG GUO-SHENG, LI ZHE-SHEN, XU MIN, JIN XIAO-FENG, WANG XUN, ZHU XING-GUO.FORMATION AND CHEMICAL REACTION OF THE Mn/GaAs(100) INTERFACE. Acta Physica Sinica, 1993, 42(8): 1333-1339.doi:10.7498/aps.42.1333
[12]	LU XUE-KUN, HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN.PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES. Acta Physica Sinica, 1992, 41(4): 689-696.doi:10.7498/aps.41.689
[13]	ZHONG ZHAN-TIAN, LUO WEN-ZHE, MOU SHAN-MING, ZHANG KAI-YAN, LI XIA, LI CHENG-FANG.ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE. Acta Physica Sinica, 1992, 41(4): 683-688.doi:10.7498/aps.41.683
[14]	LU XUE-KUN.THE Al-GaAs(100)(4×1) INTERFACIAL REACTION STUDIED BY HREELS, XPS AND LEED. Acta Physica Sinica, 1988, 37(11): 1882-1887.doi:10.7498/aps.37.1882
[15]	HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN, WANG XUN.A POSSIBLE SURFACE ATOMIC STRUCTURE MODEL OF InP (100) (4×2) RECONSTRUCTION. Acta Physica Sinica, 1987, 36(9): 1148-1153.doi:10.7498/aps.36.1148
[16]	XU ZHANG-LONG, LIU GU, JI ZHEN-GUO, ZHOU XIAO-XIA.A LEED-AES INVESTIGATION OF SULPHUR AND OXYGEN SEGREGATION ON VANADIUM(100) SURFACE. Acta Physica Sinica, 1987, 36(11): 1485-1491.doi:10.7498/aps.36.1485
[17]	JIN XIAO-FENG, FENG YI-QING, ZHUANG CHENG-QUN, WANG XUN.THE THERMAL DESORPTION SPECTRA STUDY OF HYDROGEN CHEMISORPTION ON Si(100) CLEAN SURFACE. Acta Physica Sinica, 1984, 33(6): 747-754.doi:10.7498/aps.33.747
[18]	XU YA-BUO, DONG GUO-SHENG, DING XUN-MIN, YANG SHU, WANG XUN.THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE. Acta Physica Sinica, 1983, 32(10): 1339-1343.doi:10.7498/aps.32.1339
[19]	CHE GUANG-CAN, CHEN LI-QUAN.THE PHASE DIAGRAMS OF THE PSEUDO-BINARY SYSTEMS Li2SO4-Li2B2O4 Li2SO4-(NH4)2SO4 AND IONIC CONDUCTION INVESTIGATION. Acta Physica Sinica, 1981, 30(9): 1219-1224.doi:10.7498/aps.30.1219
[20]	.. Acta Physica Sinica, 1965, 21(12): 2037-2039.doi:10.7498/aps.21.2037

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Vol. 47, Issue 1 - 1998-01-05

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