[1] |
Jiang Zhou, Jiang Xue, Zhao Ji-Jun.Electronic properties of two-dimensional kagome lattice based on transition metal phthalocyanine heterojunctions. Acta Physica Sinica, 2023, 72(24): 247502.doi:10.7498/aps.72.20230921 |
[2] |
Li Yong-Ning, Xie Yi-Qun, Wang Yin.Strain control of two-dimensional ferroelectric In2Se3/InSe vertical heterojunction energy band. Acta Physica Sinica, 2021, 70(22): 227701.doi:10.7498/aps.70.20211158 |
[3] |
Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He.Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(15): 157303.doi:10.7498/aps.69.20200250 |
[4] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen.Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica, 2019, 68(16): 166801.doi:10.7498/aps.68.20191074 |
[5] |
Li Qun, Chen Qian, Chong Jing.Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica, 2018, 67(2): 027303.doi:10.7498/aps.67.20171827 |
[6] |
Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong.Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica, 2014, 63(8): 080202.doi:10.7498/aps.63.080202 |
[7] |
Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou.Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica, 2013, 62(15): 150202.doi:10.7498/aps.62.150202 |
[8] |
Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao.Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica, 2012, 61(23): 237302.doi:10.7498/aps.61.237302 |
[9] |
Tang Zhen-Kun, Wang Ling-Ling, Tang Li-Ming, You Kai-Ming, Zou Bing-Suo.Spin polarized transport of two-dimensional electron gas through step-magnetic barrier structure. Acta Physica Sinica, 2008, 57(9): 5899-5905.doi:10.7498/aps.57.5899 |
[10] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013 |
[11] |
Li Dong-Lin, Zeng Yi-Ping.Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica, 2006, 55(7): 3677-3682.doi:10.7498/aps.55.3677 |
[12] |
Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044 |
[13] |
Chen San, Xie Shang-Yuan, Yang Ya-Ping, Chen Hong.Spontaneous emission from a two-level atom embedded in two-band three-dimensional photonic crystals. Acta Physica Sinica, 2003, 52(4): 853-858.doi:10.7498/aps.52.853 |
[14] |
LI GUO-HUI, ZHOU SHI-PING, XU DE-MING.RESEARCH ON THE DYNAMICAL BEHAVIORS OF GaAs/AlGaAs HETEROSTRUCTURES. Acta Physica Sinica, 2001, 50(8): 1567-1573.doi:10.7498/aps.50.1567 |
[15] |
JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GUO-ZHEN, MA ZHI-XUN, LI BIAO, GUO SHAO-L ING, CHU JUN-HAO.STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER. Acta Physica Sinica, 2000, 49(9): 1804-1808.doi:10.7498/aps.49.1804 |
[16] |
CHEN ZHANG-HAI, HU CAN-MING, CHEN JIAN-XIN, SHI GUO-LIANG, LIU PU-LIN, SHEN XUE-CHU, LI AI-ZHEN.STUDY ON CYCLOTRON RESONANCE SPECTRA OF TWO-DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC InxGa1-xAs/In0.52Al0.48As HETEROJUNCTIONS. Acta Physica Sinica, 1998, 47(6): 1018-1025.doi:10.7498/aps.47.1018 |
[17] |
WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
[18] |
XIONG XIAO-MING, ZHOU SHI-XUN.QUANTIZED MOTION OF TWO-DIMENSIONAL ELECTRONS IN A STRONG MAGNETIC FIELD. Acta Physica Sinica, 1987, 36(7): 935-939.doi:10.7498/aps.36.935 |
[19] |
SHI CHANG-XIN, XIN SHANG-HENS, WU DING-FEN.THE EFFECT OF PARALLEL CONDUCTANCE IN AlGaAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1987, 36(3): 363-367.doi:10.7498/aps.36.363 |
[20] |
XIONG XIAO-MING, ZHOU SHI-XUN.THE ITERATION RESULT OF THE GROUND STATE ENERGY FOR A TWO DIMENSIONAL ELECTRON GAS IN THE NEUTRALIZING BACKGROUND. Acta Physica Sinica, 1987, 36(10): 142-144.doi:10.7498/aps.36.142 |