| [1] |
Dong Gang, Liu Dang, Shi Tao, Yang Yin-Tang.Effects of thermal stress induced by mulitiple through silicon vias on mobility and keep out zone. Acta Physica Sinica, 2015, 64(17): 176601.doi:10.7498/aps.64.176601 |
| [2] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
| [3] |
Cao Yu, Zhang Jian-Jun, Yan Gan-Gui, Ni Jian, Li Tian-Wei, Huang Zhen-Hua, Zhao Ying.Influences of electrode separation on structural properties of μc-Si1-xGex：H thin films. Acta Physica Sinica, 2014, 63(7): 076801.doi:10.7498/aps.63.076801 |
| [4] |
Yang Shuang-Bo.Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica, 2013, 62(15): 157301.doi:10.7498/aps.62.157301 |
| [5] |
Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan.The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica, 2012, 61(13): 137104.doi:10.7498/aps.61.137104 |
| [6] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
| [7] |
Wang Xiao-Yan, Zhang He-Ming, Song Jian-Jun, Ma Jian-Li, Wang Guan-Yu, An Jiu-Hua.Electron mobility of strained Si/(001)Si1- x Ge x. Acta Physica Sinica, 2011, 60(7): 077205.doi:10.7498/aps.60.077205 |
| [8] |
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Model of intrinsic carrier concentration of strained Si/(001）Si1－xGex. Acta Physica Sinica, 2010, 59(3): 2064-2067.doi:10.7498/aps.59.2064 |
| [9] |
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Model of hole effective mass of strained Si1－xGex/(111)Si. Acta Physica Sinica, 2010, 59(1): 579-582.doi:10.7498/aps.59.579 |
| [10] |
Liu Xue-Qin, Han Guo-Jian, Huang Chun-Kui, Lan Wei.Thickness dependence of microstructure for La0.9Sr0.1MnO3/Si films determined by micro-Raman spectroscopy. Acta Physica Sinica, 2009, 58(11): 8008-8013.doi:10.7498/aps.58.8008 |
| [11] |
Song Jian-Jun, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Dai Xian-Ying.Anisotropy of hole effective mass of strained Si/(001)Si1-xGex. Acta Physica Sinica, 2009, 58(7): 4958-4961.doi:10.7498/aps.58.4958 |
| [12] |
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Band structure of strained Si1-xGex. Acta Physica Sinica, 2009, 58(11): 7947-7951.doi:10.7498/aps.58.7947 |
| [13] |
Chen Wei-Lan, Gu Pei-Fu, Wang Ying, Zhang Yue-Guang, Liu Xu.Analysis of the thermal stress in infrared films. Acta Physica Sinica, 2008, 57(7): 4316-4321.doi:10.7498/aps.57.4316 |
| [14] |
Yang Fu-Hua, Tan Jin, Zhou Cheng-Gang, Luo Hong-Bo.Ab initio studies of CiCs and CiOi defects in Si1-xGex alloys. Acta Physica Sinica, 2008, 57(2): 1109-1116.doi:10.7498/aps.57.1109 |
| [15] |
Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
| [16] |
WANG YIN-SHU, LI JIN-MIN, WANG YAN-BIN, WANG YU-TIAN, SUN GUO-SHENG, LIN LAN-YING.THE EFFECTS OF PRE-IRRADIATION ON THE FORMATION OF Si1-xCx ALLOYS. Acta Physica Sinica, 2001, 50(7): 1329-1333.doi:10.7498/aps.50.1329 |
| [17] |
YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
| [18] |
SHI XIAO-HONG, LIU PU-LIN, GONG DA-WEI, CHEN ZHANG-HAI, SHI GUO-LIANG, SHEN XUE-CHU.PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER. Acta Physica Sinica, 1997, 46(2): 370-374.doi:10.7498/aps.46.370 |
| [19] |
WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
| [20] |
YAN CHENG.THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H. Acta Physica Sinica, 1982, 31(12): 62-74.doi:10.7498/aps.31.62 |
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