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Wu Jin, Lu Zhan-Peng, Xu Zhi-Hao, Guo Li-Ping.Mobility edges and reentrant localization induced by superradiance. Acta Physica Sinica, 2022, 71(11): 113702.doi:10.7498/aps.71.20212246 |
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
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Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He.The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica, 2020, 69(7): 077302.doi:10.7498/aps.69.20191931 |
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Xu Zhi-Hao, Huangfu Hong-Li, Zhang Yun-Bo.Mobility edges of bosonic pairs in one-dimensional quasi-periodical lattices. Acta Physica Sinica, 2019, 68(8): 087201.doi:10.7498/aps.68.20182218 |
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Liu Tong, Gao Xian-Long.Identifying the mobility edges in a one-dimensional incommensurate model with p-wave superfluid. Acta Physica Sinica, 2016, 65(11): 117101.doi:10.7498/aps.65.117101 |
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099 |
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min.A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica, 2006, 55(7): 3617-3621.doi:10.7498/aps.55.3617 |
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
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Li Ze-Hong, Li Zhao-Ji, Zhang Bo, Fan Jian.Mobility model of nonuniform channel MOS by radiation induced positive spatial charge. Acta Physica Sinica, 2004, 53(2): 561-565.doi:10.7498/aps.53.561 |
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