[1] |
Qiu Peng, Liu Heng, Zhu Xiao-Li, Tian Feng, Du Meng-Chao, Qiu Hong-Yu, Chen Guan-Liang, Hu Yu-Yu, Kong De-Lin, Yang Jin, Wei Hui-Yun, Peng Ming-Zeng, Zheng Xin-He.Atomic layer deposition and application of group III nitrides semiconductor and their alloys. Acta Physica Sinica, 2024, 73(3): 038102.doi:10.7498/aps.73.20230832 |
[2] |
Kang Jia-Xing, Yan Quan-He, Cao Hao-Yu, Meng Wei-Wei, Xu Fei, Hong Feng.Photovoltaic properties of novel quaternary chalcogenides based on high-throughput screening and first-principles calculations. Acta Physica Sinica, 2024, 0(0): .doi:10.7498/aps.73.20240795 |
[3] |
Tang Yan-Hao.Exotic states in moiré superlattices of twisted semiconducting transition metal dichalcogenides. Acta Physica Sinica, 2023, 72(2): 027802.doi:10.7498/aps.72.20222080 |
[4] |
Shu Yan-Tao, Zhang You-Wei, Wang Shun.Photodetectors based on homojunctions of transition metal dichalcogenides. Acta Physica Sinica, 2021, 70(17): 177301.doi:10.7498/aps.70.20210859 |
[5] |
Shi Heng-Xian, Yang Kai-Ke, Luo Jun-Wei.Origin of abnormal thermal conductivity in group III-V boron compound semiconductors. Acta Physica Sinica, 2021, 70(14): 147302.doi:10.7498/aps.70.20210797 |
[6] |
Liu Hui-Ying, Wang Shu-Shen, Lin Heng-Fu.Group III monochalcogenide of single-layered haeckelites structureMX(M= Al, Ga, In;X= S, Se, Te). Acta Physica Sinica, 2020, 69(14): 146802.doi:10.7498/aps.69.20191955 |
[7] |
Xie Xiu-Hua, Li Bing-Hui, Zhang Zhen-Zhong, Liu Lei, Liu Ke-Wei, Shan Chong-Xin, Shen De-Zhen.Point defects: key issues for II-oxides wide-bandgap semiconductors development. Acta Physica Sinica, 2019, 68(16): 167802.doi:10.7498/aps.68.20191043 |
[8] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen.Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica, 2019, 68(16): 166801.doi:10.7498/aps.68.20191074 |
[9] |
Zhou Yu-Zhi.Model and applications of transition metal dichalcogenides based compliant substrate epitaxy system. Acta Physica Sinica, 2018, 67(21): 218102.doi:10.7498/aps.67.20181571 |
[10] |
Chen Xiang-Lei, Zhang Jie, Du Huai-Jiang, Zhou Xian-Yi, Ye Bang-Jiao.Calculation of positron lifetime of compound semiconductors. Acta Physica Sinica, 2010, 59(1): 603-608.doi:10.7498/aps.59.603 |
[11] |
Zhang Ming-Xin, Wu Ke-Chen, Liu Cai-Ping, Wei Yong-Qin.Computational study on the exchange-correlation function in density functional theory and optical nonlinearity of transition-metal complexes. Acta Physica Sinica, 2005, 54(4): 1762-1770.doi:10.7498/aps.54.1762 |
[12] |
Wang Jie, Yu Gen-Cai, Zhu Chang-Sheng, Wang Xun.. Acta Physica Sinica, 1995, 44(9): 1471-1479.doi:10.7498/aps.44.1471 |
[13] |
YANG YING-CHANG, DONG SHENG-ZHI, YANG JUN.STUDY ON THE STRUCTURAL AND MAGNETIC PROPERTIES OF RFe10.5V1.5Nx. Acta Physica Sinica, 1994, 43(7): 1177-1184.doi:10.7498/aps.43.1177 |
[14] |
WANG REN-ZHI, HUANG MEI-CHUN.FIRST PRINCIPLE STUDY OF OPTICAL-PHONON DEFORMA-TION POTENTIALS ON Λ-AXIS FOR GaAs AND AlAs. Acta Physica Sinica, 1990, 39(2): 282-288.doi:10.7498/aps.39.282 |
[15] |
WANG REN-ZHI, HUANG MEI-CHUN.STUDY OF OPTIC AL-PHONON DEFORMATION POTENTIALS IN Ga1-xAlxAs. Acta Physica Sinica, 1990, 39(11): 1778-1784.doi:10.7498/aps.39.1778 |
[16] |
DUAN WEN-HUI, GU BING-LIN, ZHU JIA-LIN.ELECTRONIC STRUCTURE OF CHALCOGEN COMPOUNDS CdSe, CdTe AND SnSe. Acta Physica Sinica, 1990, 39(3): 437-445.doi:10.7498/aps.39.437 |
[17] |
LI LI-MAN, WANG GANG.PHYSICAL INVESTIGATION ON TUNGSTEN BRONZE CRYSTALS. Acta Physica Sinica, 1989, 38(5): 849-852.doi:10.7498/aps.38.849 |
[18] |
XU JIAN-HUA.COHESIVE PROPERTIES OF Al3V. Acta Physica Sinica, 1989, 38(4): 679-682.doi:10.7498/aps.38.679 |
[19] |
WANG DE-NING, WANG WEI-YUAN.INVESTIGATION ON THE IONIC CHARACTERISTIC OF CHEMICAL BOND IN COMPOUND SEMICONDUCTOR AND THE EFFECT OF IT ON THE IONIC RANGE PARAMETERS. Acta Physica Sinica, 1989, 38(6): 923-930.doi:10.7498/aps.38.923 |
[20] |
HSU SHIH-CHIOU.THE GROUP ANALYSIS OF HYDROCARBON COMPOUNDS BY THE INTEGRAL INTENSITIES OF INFRARED SPECTRA. Acta Physica Sinica, 1959, 15(6): 337-340.doi:10.7498/aps.15.337 |