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Chen Zhen-Ni, Liu Sheng-Li, Wang Hai-Yun, Cheng Jie.Stress mechanism of Y1-xGdxBCO thin film with Gd substitution prepared by F-free metal organic deposition method. Acta Physica Sinica, 2017, 66(15): 156101.doi:10.7498/aps.66.156101 |
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Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao.Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor deposition. Acta Physica Sinica, 2017, 66(10): 106101.doi:10.7498/aps.66.106101 |
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Wang Bao-Zhu, Zhang Xiu-Qing, Zhang Ao-Di, Zhou Xiao-Ran, Bahadir Kucukgok, Na Lu, Xiao Hong-Ling, Wang Xiao-Liang, Ian T. Ferguson.Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition. Acta Physica Sinica, 2015, 64(4): 047202.doi:10.7498/aps.64.047202 |
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Xu Zhong-Hua, Chen Wei-Bing, Ye Wei-Qiong, Yang Wei-Feng.A Study of tandem structure organic solar cells composed of polymer and small molecular sub-cells. Acta Physica Sinica, 2014, 63(21): 218801.doi:10.7498/aps.63.218801 |
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Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue.The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(8): 5705-5708.doi:10.7498/aps.58.5705 |
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Yang Fan, Ma Jin, Kong Ling-Yi, Luan Cai-Na, Zhu Zhen.Structural, optical and electrical properties of Ga2(1-x)In2xO3 films prepared by metalorganic chemical vapor deposition. Acta Physica Sinica, 2009, 58(10): 7079-7082.doi:10.7498/aps.58.7079 |
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Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(12): 8506-8510.doi:10.7498/aps.58.8506 |
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Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287.doi:10.7498/aps.58.7282 |
[10] |
Wang Ye-An, Qin Fu-Wen, Wu Dong-Jiang, Wu Ai-Min, Xu Yin, Gu Biao.Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition. Acta Physica Sinica, 2008, 57(1): 508-513.doi:10.7498/aps.57.508 |
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Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
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Ren Jun-Feng, Fu Ji-Yong, Liu De-Sheng, Xie Shi-Jie.Diffusion theory of spin injection into organic polymers*. Acta Physica Sinica, 2004, 53(11): 3814-3817.doi:10.7498/aps.53.3814 |
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LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
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NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG.FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica, 1998, 47(8): 1346-1353.doi:10.7498/aps.47.1346 |
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NIU ZHI-CHUAN, ZHOU ZENG-QI, LIN YAO-WANG, LI XIN-FENG, ZHANG YI, HU XIONG WEI, Lü ZHEN-DONG, YUAN ZHI-LIANG, XU ZHONG-YING.InGaAs/GaAs STRAINED RIDGE QUANTUM WIRES GROWN-BY MBE ON NONPLANAR SUBSTRATE. Acta Physica Sinica, 1997, 46(5): 969-974.doi:10.7498/aps.46.969 |
[16] |
MAO HUI-BING, LU WEI, MA ZHAO-HUI, LIU XING-QUAN, SHEN XUE-CHU.MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE. Acta Physica Sinica, 1994, 43(7): 1118-1122.doi:10.7498/aps.43.1118 |
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LU LI-WU, ZHOU JIE, FENG SONG-LIN, DUAN SHU-KUN.DEEP LEVEL STUDIES OF Ga1-xInxAs/InP LASERS GROWN BY LP-MOVPE. Acta Physica Sinica, 1994, 43(5): 779-784.doi:10.7498/aps.43.779 |
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
[20] |
LU HUAI-XIAN, DU YOU-WEI, WANG TING-XIANG, ZHANG YU-CHANG.INVESTIGATION ON SPIN PINNING EFFECT OF THE MAGNETITE PARTICLE SURFACE COATED WITH ORGANISM. Acta Physica Sinica, 1985, 34(1): 121-125.doi:10.7498/aps.34.121 |