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Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming.STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica, 2012, 61(6): 066801.doi:10.7498/aps.61.066801 |
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Yang Jing-Jing, Du Wen-Han.Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface. Acta Physica Sinica, 2011, 60(3): 037301.doi:10.7498/aps.60.037301 |
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Han Lu-Hui, Zhang Chong-Hong, Zhang Li-Qing, Yang Yi-Tao, Song Yin, Sun You-Mei.X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions. Acta Physica Sinica, 2010, 59(7): 4584-4590.doi:10.7498/aps.59.4584 |
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Du Wen-Han.Investigation on the deoxidation process of SrO/Si(100) surface. Acta Physica Sinica, 2010, 59(5): 3357-3361.doi:10.7498/aps.59.3357 |
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Wu Wei-Dong, He Ying-Jie, Wang Feng, Zhan Yong-Jun, Bai Li, Ju Xin, Chen Zheng-Hao, Tang Yong-Jian, Sun Wei-Guo, Pan Hai-Bin.Fabrication, microstructure and UPS spectra of Co: BaTiO3/Si(100) nano-composite films. Acta Physica Sinica, 2008, 57(1): 600-606.doi:10.7498/aps.57.600 |
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Wang Yu-Yu, Zhao Yong-Tao, Xiao Guo-Qing, Fang Yan, Zhang Xiao-An, Wang Tie-Shan, Wang Shi-Wei, Peng Hai-Bo.Electron emission induced by the interaction of highly charged ions 207Pbq+(24≤q≤36) with solid surface of Si(110). Acta Physica Sinica, 2006, 55(2): 673-676.doi:10.7498/aps.55.673 |
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Cai Jian-Qiu, Tao Xiang-Ming, Chen Wen-Bin, Zhao Xin-Xin, Tan Ming-Qiu.Density functional theory study on the atomic structure and electronic states of Cu(100) (2×22)R45°-O surface. Acta Physica Sinica, 2005, 54(11): 5350-5355.doi:10.7498/aps.54.5350 |
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BAN DA-YAN, FANG RONG-CHUAN, LI YONG-PING, ZHANG HAI-FENG.THE STUDY OF THE ELECTRONIC STRUCTURE OF ZnSe(100) POLAR SURFACE. Acta Physica Sinica, 1997, 46(4): 767-774.doi:10.7498/aps.46.767 |
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ZHANG XUN-SHENG, FAN CAO-YANG, SUI HUA, BAO SHI-NING, XU YA-BO, XU SHI-HONG, PAN HAI-BIN, XU PENG-SHOU.STUDIES OF Na ADSORBED ORDERLY AND DISORDERLY ON Si(111) SURFACE USING PES. Acta Physica Sinica, 1996, 45(7): 1244-1248.doi:10.7498/aps.45.1244 |
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XU SHI-HONG, LU ER-DONG, YU XIAO-JIANG, PAN HAI-BIN, ZHANG FA-PEI, XU PENG-SHOU.SRPES STUDY OF THE Sm/Si(100) INTERFACE FORMATION AND ELECTRONIC STRUCTURES. Acta Physica Sinica, 1996, 45(11): 1898-1904.doi:10.7498/aps.45.1898 |
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HU XIAO-MING, LIN ZHANG-DA.HYDROGEN ADSORPTION INDUCED PHASE TRANSITIONS ON Si(100) STUDIED BY LEED. Acta Physica Sinica, 1996, 45(6): 985-989.doi:10.7498/aps.45.985 |
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CHEN YAN, DONG GUO-SHENG, ZHANG MING, Jin Xiao-Feng, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG.. Acta Physica Sinica, 1995, 44(1): 145-151.doi:10.7498/aps.44.145 |
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Zhao Te-Xiu, Wang Xiao-Peng, Wu Jian-Xin, Xu Peng-Shou, Lu Er-Dong, Xu Zhen-Jia, Ji Hang.. Acta Physica Sinica, 1995, 44(4): 622-628.doi:10.7498/aps.44.622 |
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LI NAN, QIAN SHEND-FA, FU CHUN-SHENG, XIE SI-SHEN.A STUDY ON THE LOCAL ELECTRONIC STRUCTURE OF GRAPHITE SURFACE WITH SCANNING TUNNELING SPECTROSCOPY (STS). Acta Physica Sinica, 1994, 43(2): 274-281.doi:10.7498/aps.43.274 |
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ZHONG ZHAN-TIAN, LUO WEN-ZHE, MOU SHAN-MING, ZHANG KAI-YAN, LI XIA, LI CHENG-FANG.ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE. Acta Physica Sinica, 1992, 41(4): 683-688.doi:10.7498/aps.41.683 |
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LU JIANG, WU ZI-QIN.A CROSS-SECTIONED TEM STUDY OF Si-W/Si/SiO2/Si(100). Acta Physica Sinica, 1989, 38(6): 981-986.doi:10.7498/aps.38.981 |
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WANG XIANG-DONG, HU JI-HUANG, DAI DAO-XUAN.TOTAL CURRENT SPECTROSCOPY STUDY ON CLEAN Si(111)7×7 SURFACE. Acta Physica Sinica, 1988, 37(11): 1888-1892.doi:10.7498/aps.37.1888 |
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SU ZI-MIN, PENG SHAO-QI.DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica, 1986, 35(6): 731-740.doi:10.7498/aps.35.731 |
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JIN XIAO-FENG, FENG YI-QING, ZHUANG CHENG-QUN, WANG XUN.THE THERMAL DESORPTION SPECTRA STUDY OF HYDROGEN CHEMISORPTION ON Si(100) CLEAN SURFACE. Acta Physica Sinica, 1984, 33(6): 747-754.doi:10.7498/aps.33.747 |
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Yu Ming-ren, Yang Guang, Wang Xun.DETERMINATION OF THE ATOMIC CONCENTRATION RATIO ON InP (100) CLEAN SURFACES BY X-RAY PHOTOELECTRON SPECTROSCOPY. Acta Physica Sinica, 1983, 32(6): 799-802.doi:10.7498/aps.32.799 |
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