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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song.Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901.doi:10.7498/aps.69.20200029 |
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Xu Rong, Jia Guang-Yi, Liu Chang-Long.Synthesis of nanoparticles in SiO2 by implantation of Cu and Zn ions and their thermal stability in oxygen atmoshphere. Acta Physica Sinica, 2014, 63(7): 078501.doi:10.7498/aps.63.078501 |
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica, 2012, 61(22): 227302.doi:10.7498/aps.61.227302 |
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Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
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Fu Wei-Jia, Liu Zhi-Wen, Liu Ming, Mu Zong-Xin, Zhang Qing-Yu, Guan Qing-Feng, Chen Kang-Min.Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation. Acta Physica Sinica, 2009, 58(8): 5693-5699.doi:10.7498/aps.58.5693 |
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Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo.Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica, 2007, 56(8): 4930-4935.doi:10.7498/aps.56.4930 |
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Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long.Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica, 2007, 56(11): 6543-6546.doi:10.7498/aps.56.6543 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min.Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493.doi:10.7498/aps.55.5487 |
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Man Bao-Yuan, Zhang Yun-Hai, Lü Guo-Hua, Liu Ai-Hua, Zhang Qing-Gang, Guzman L., Adami M., Miotello A..Study on surface modification of polytetrafluoroethylene by N+ ion implantation. Acta Physica Sinica, 2005, 54(2): 837-841.doi:10.7498/aps.54.837 |
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Lu Ting, Zhou Hong-Yu, Ding Xiao-Ji, Wang Xin-Fu, Zhu Guang-Hua.The study of depth distribution for ion with low energy implanted into plant seeds and mechanism of biological effect. Acta Physica Sinica, 2005, 54(10): 4822-4826.doi:10.7498/aps.54.4822 |
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Zhang Gu-Ling, Wang Jiu-Li, Yang Wu-Bao, Fan Song-Hua, Liu Chi-Zi, Yang Si-Ze.TiN coating for inner surface modification by grid enhanced plasma source ion im plantation. Acta Physica Sinica, 2003, 52(9): 2213-2218.doi:10.7498/aps.52.2213 |
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng.. Acta Physica Sinica, 2002, 51(3): 629-634.doi:10.7498/aps.51.629 |
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ZOU YUN-JUAN, YAN HUI, CHEN GUANG-HUA, JIN YUN-FAN, YANG RU.ION RADIATION DAMAGE OF C60 FILMS. Acta Physica Sinica, 1998, 47(11): 1923-1927.doi:10.7498/aps.47.1923 |
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WANG GUO-MEI, YUN HUAI-SHUN, JIANG BING, LI XING-DAN, WU DAI-HUA, YANG SHENG-RONG.STRUCTURE AND SURFACE ELECTRICAL PROPERTIES OF POLYCRYSTALLINE ZrO2 IMPLANTED BY Ni ION. Acta Physica Sinica, 1996, 45(7): 1160-1167.doi:10.7498/aps.45.1160 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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LI SHI-PU, FAN DONG-HUI, WANG GUO-MEI, XING NING, REN WEI.X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF Fe ION IMPLANTED POLYCRYSTALLINE Al2O3. Acta Physica Sinica, 1991, 40(6): 857-861.doi:10.7498/aps.40.857 |
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ZHANG YUE-LU, BI SI-YUN, MEI LIANG-MO, LUAN KAI-ZHENG, LIU YI-HUA.STUDIES ON THE AMORPHOUS STATE FORMATION EFFECT OF BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON THIN FILMS. Acta Physica Sinica, 1988, 37(8): 1373-1375.doi:10.7498/aps.37.1373 |
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ZHANG YUE-LU, MEI LIANG-MO, GUO YI-CHENG, GUO XIAO-QIN, CONG PEI-JIE.STUDIES ON PRODUCING AMORPHOUS ALLOY LAYERS BY BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON FILMS. Acta Physica Sinica, 1986, 35(7): 850-854.doi:10.7498/aps.35.850 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |
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