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Huang Shi-Hao, Xie Wen-Ming, Wang Han-Cong, Lin Guang-Yang, Wang Jia-Qi, Huang Wei, Li Cheng.Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitions. Acta Physica Sinica, 2018, 67(4): 040501.doi:10.7498/aps.67.20171413 |
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Li Chang, Xue Wei, Han Chang-Feng, Qian Lei, Zhao Su-Ling, Yu Zhi-Nong, Zhang Ting, Wang Ling-Xue.Effect of ZnO electron-transport layer on light-soaking issue in inverted polymer solar cells. Acta Physica Sinica, 2015, 64(8): 088401.doi:10.7498/aps.64.088401 |
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Gao Kuang-Hong, Wei Lai-Ming, Yu Guo-Lin, Yang Rui, Lin Tie, Wei Yan-Feng, Yang Jian-Rong, Sun Lei, Dai Ning, Chu Jun-Hao.Magnetotransport property of HgCdTe inversion layer. Acta Physica Sinica, 2012, 61(2): 027301.doi:10.7498/aps.61.027301 |
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Huang Shi-Hao, Li Cheng, Chen Cheng-Zhao, Zheng Yuan-Yu, Lai Hong-Kai, Chen Song-Yan.The optical property of tensile-strained n-type doped Ge. Acta Physica Sinica, 2012, 61(3): 036202.doi:10.7498/aps.61.036202 |
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
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Yu Hua-Ling.Abnormal minigap induced by superconducting proximity effects in a metallic film. Acta Physica Sinica, 2007, 56(10): 6038-6044.doi:10.7498/aps.56.6038 |
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Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia.The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica, 2006, 55(5): 2498-2503.doi:10.7498/aps.55.2498 |
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Gao Jun, Jiang Xiao-Long, Ren Shang-Kun, Ni Gang, Zhang Feng-Ming, Du You-Wei.Extraordinary Hall effect in FexSn100-x granular alloy films. Acta Physica Sinica, 2004, 53(1): 226-228.doi:10.7498/aps.53.226 |
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ZHENG YONG-MEI, CHEN YU, MIAO RONG-ZHI.ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL. Acta Physica Sinica, 1996, 45(9): 1543-1550.doi:10.7498/aps.45.1543 |
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LI YU-ZHI, XU CUN-YI, ZHOU GUI-EN, LIU HONG-BAO, ZHANG YU-HENG.THE MUTUAL DIFFUSION AND ABNORMAL RESISTIVITY BEHAVIOUR IN ANNEALED a-Ge/Pb LAYER. Acta Physica Sinica, 1993, 42(5): 832-839.doi:10.7498/aps.42.832 |
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WU FENG-MEI, WANG CHUN, TANG JIE, GONG BANG-RUI.STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS. Acta Physica Sinica, 1988, 37(7): 1203-1208.doi:10.7498/aps.37.1203 |
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ZHANG YU-HENG, LIU HONG-BAO.THE PROXIMITY EFFECT AND MUTUAL DIFFUSION IN a-Ge/Ag LAYERS. Acta Physica Sinica, 1988, 37(6): 950-958.doi:10.7498/aps.37.950 |
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XIA MENG-FEN.THE ANOMALOUS DIFFUSION EFFECT IN A STOCHASTIC MAGNETIC FIELD. Acta Physica Sinica, 1981, 30(9): 1275-1278.doi:10.7498/aps.30.1275 |
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