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Duan Cong, Liu Jun-Jie, Chen Yong-Jie, Zuo Hui-Ling, Dong Jian-Sheng, Ouyang Gang.Adhesion properties of MoS2/SiO2interface: Size and temperature effects. Acta Physica Sinica, 2024, 73(5): 056801.doi:10.7498/aps.73.20231648 |
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Liu Bao-Jian, Duan Wei-Bo, Li Da-Qi, Yu De-Ming, Chen Gang, Wang Tian-Hong, Liu Ding-Quan.Effect of annealing temperature on structure and stress properties of Ta2O5/SiO2multilayer reflective coatings. Acta Physica Sinica, 2019, 68(11): 114208.doi:10.7498/aps.68.20182247 |
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Xi Guang-Ping, Ma Xiang-Yang, Tian Da-Xi, Zeng Yu-Heng, Gong Long-Fei, Yang De-Ren.Effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped Czochralski silicon. Acta Physica Sinica, 2008, 57(11): 7108-7113.doi:10.7498/aps.57.7108 |
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Cao Bo, Bao Liang-Man, Li Gong-Ping, He Shan-Hu.Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems. Acta Physica Sinica, 2006, 55(12): 6550-6555.doi:10.7498/aps.55.6550 |
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Chen Chang-Yong, Chen Wei-De, Wang Yong-Qian, Song Shu-Fang, Xu Zhen-Jia.Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films. Acta Physica Sinica, 2003, 52(3): 736-739.doi:10.7498/aps.52.736 |
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JIN JIN-SHENG, YE GAO-XIANG, QIAN CHANG-JI, ZHAI GUO-QING, YE QUAN-LIN, JIAO ZHENG-KUAN.AGGREGATION CHARACTERISTICS OF GOLD ATOMS DEPOSITED ON MOLTEN GLASS SURFACES. Acta Physica Sinica, 2001, 50(3): 544-549.doi:10.7498/aps.50.544 |
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SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING.MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica, 2001, 50(7): 1350-1354.doi:10.7498/aps.50.1350 |
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WANG MAO-XIANG, YU JIAN-HUA, SUN CHENG-XIU, WU ZONG-HAN.NEGATIVE RESISTANCE PHENOMENON AND LIGHT EMISSION PROPERTY OF THE METAL-INSULATOR-SEMICONDUCTOR (Au-SiO2-Si) TUNNEL JUNCTION. Acta Physica Sinica, 2000, 49(6): 1159-1162.doi:10.7498/aps.49.1159 |
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DU XIN-HUA, LIU ZHEN-XIANG, XIE KAN, WANG YAN-BIN, CHU WU-YANG.XPS STUDIES OF CeO2/Nb2O5 INTERFACE EFFECT ON THE IMPROVEMENT OF THE OXYGEN SENSITIVITY OF CeO2 LAYER. Acta Physica Sinica, 1998, 47(12): 2025-2030.doi:10.7498/aps.47.2025 |
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CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI.DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE. Acta Physica Sinica, 1992, 41(11): 1870-1879.doi:10.7498/aps.41.1870 |
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QI MING, LUO JIN-SHENG.A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE. Acta Physica Sinica, 1988, 37(10): 1600-1606.doi:10.7498/aps.37.1600 |
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