In this work, we investigated the ion range parameters for binary compounds having positive deviation from Bragg rule, that is the calculated Se(E) value is higher than experimental Se(E) value, By introducing a "biatomic model" with the idea of "regular", the implanted range in binary compounds was considered not only as the stopping power of ions by two alike cofposed atoms S11(E) and S22(E), but also as the stopping power of ions by two unlike composed atoms S12(E) and S21 (E). Based on Berthelot relation, let S12(E)=S21(E)=(S11(E)·S22(E))1/2, the stopping power and total range in binary compounds were derived as follows: NS(E)=1/2[(N1S11(E))1/2+(N2S22(E)1/2)]2, R=4/a[x-A1(arctg(2x+f)/△1/2-arctg(f/△1/2))-B1(ln(x+g)2/g2·e/(x2+fx+e)) -b/2 ln(x2+fx+e/e) where X=E1/2 ,E is the ion implanted energy, all the others are constants depend upon the mass and the atomic number of the ions and targets. Combined with the relationships between R and Rp, Rp and △Rp in ref. [1], we calculated the Rp and △ Rp values in systems with positive deviation. The significances of formulas given in this paper were discussed.