[1] |
Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue.Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica, 2022, 71(5): 057301.doi:10.7498/aps.71.20211917 |
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Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang.Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica, 2022, 71(3): 037301.doi:10.7498/aps.71.20211536 |
[3] |
Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun.Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions. Acta Physica Sinica, 2022, 71(17): 176101.doi:10.7498/aps.71.20220628 |
[4] |
.Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211536 |
[5] |
.Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211917 |
[6] |
Han Dong, Sun Fei-Yang, Lu Ji-Yuan, Song Fu-Ming, Xu Yue.Reducing dark count of single-photon avalanche diode detector with polysilicon field plate. Acta Physica Sinica, 2020, 69(14): 148501.doi:10.7498/aps.69.20200523 |
[7] |
Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
[8] |
Zhao Yu, Wei Ai-Xiang, Liu Jun.Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance. Acta Physica Sinica, 2015, 64(11): 118501.doi:10.7498/aps.64.118501 |
[9] |
Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
[10] |
Tang Xiao-Yan, Dai Xiao-Wei, Zhang Yu-Ming, Zhang Yi-Men.Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode. Acta Physica Sinica, 2012, 61(8): 088501.doi:10.7498/aps.61.088501 |
[11] |
Mo Qiu-Yan, Zhao Yan-Li.Frequency responses of communication avalanche photodiodes. Acta Physica Sinica, 2011, 60(7): 072902.doi:10.7498/aps.60.072902 |
[12] |
Zhang Lin, Xiao Jian, Qiu Yang-Zhang, Cheng Hong-Liang.Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons. Acta Physica Sinica, 2011, 60(5): 056106.doi:10.7498/aps.60.056106 |
[13] |
Fan Guo-Li, Jiang Yue-Song, Liu Li, Li Fang.Analysis on high frequency performance of THz GaAs Schottky mixer diode. Acta Physica Sinica, 2010, 59(8): 5374-5381.doi:10.7498/aps.59.5374 |
[14] |
Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming.Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica, 2009, 58(4): 2737-2741.doi:10.7498/aps.58.2737 |
[15] |
Sun Ke-Xu, Jiang Shao-En, Yi Rong-Qing, Cui Yan-Li, Ding Yong-Kun, Liu Shen-Ye.Research on time characteristics of soft X-ray diode. Acta Physica Sinica, 2006, 55(1): 68-75.doi:10.7498/aps.55.68 |
[16] |
Liu Ming, Liu Hong, He Yu-Liang.The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica, 2003, 52(11): 2875-2878.doi:10.7498/aps.52.2875 |
[17] |
LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica, 2001, 50(2): 262-267.doi:10.7498/aps.50.262 |
[18] |
LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER. Acta Physica Sinica, 2001, 50(12): 2506-2510.doi:10.7498/aps.50.2506 |
[19] |
LI HONG-WEI, WANG TAI-HONG.THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505.doi:10.7498/aps.50.2501 |
[20] |
ZHOU MIAN, WANG WEI-YUAN.CARRIER TRANSPORT IN METAL-THIN INSULATOR n GaAs BARRIER DIODES. Acta Physica Sinica, 1984, 33(11): 1485-1494.doi:10.7498/aps.33.1485 |