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Yang Shuo, Cheng Peng, Chen Lan, Wu Ke-Hui.Chemical functionalization of silicene. Acta Physica Sinica, 2017, 66(21): 216805.doi:10.7498/aps.66.216805 |
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
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Feng Bo, Gan Xue-Tao, Liu Sheng, Zhao Jian-Lin.Transformation of multi-edge-dislocations to screw-dislocations in optical field. Acta Physica Sinica, 2011, 60(9): 094203.doi:10.7498/aps.60.094203 |
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Li Zhuo-Xin, Wang Dan-Ni, Wang Bao-Yi, Xue De-Sheng, Wei Long, Qin Xiu-Bo.Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing. Acta Physica Sinica, 2010, 59(12): 8915-8919.doi:10.7498/aps.59.8915 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Deng Ze-Chao, Luo Qing-Shan, Chu Li-Zhi, Ding Xue-Cheng, Liang Wei-Hua, Fu Guang-Sheng, Wang Ying-Long.Comparison of nucleation energy of nanoparticles Si formation in substrate heating and subsequent thermal annealing. Acta Physica Sinica, 2010, 59(7): 4802-4807.doi:10.7498/aps.59.4802 |
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Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan.Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD. Acta Physica Sinica, 2005, 54(1): 269-273.doi:10.7498/aps.54.269 |
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CHEN CUN-LI, LI JIAN-NIAN, HUA WEN-YU.INVESTIGATION OF MECHANISM FOR SOLID PHASE REACTION BY RAPID THERMAL ANNEALING IN Ti-Si SYSTEM. Acta Physica Sinica, 1990, 39(7): 127-133.doi:10.7498/aps.39.127 |
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