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Guo Wei-Ling, Deng Jie, Wang Jia-Lu, Wang Le, Tai Jian-Peng.GaN-based light emitting diode with graphene/indium antimony oxide composite transparent electrode. Acta Physica Sinica, 2019, 68(24): 247303.doi:10.7498/aps.68.20190983 |
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Gu Wen-Hao, Chang Sheng-Jiang, Fan Fei, Zhang Xuan-Zhou.InSb based subwavelength array for terahertz wave focusing. Acta Physica Sinica, 2016, 65(1): 010701.doi:10.7498/aps.65.010701 |
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Zhang Xiao-Ling, Meng Qing-Duan, Zhang Li-Wen, Geng Dong-Feng, Lü Yan-Qiu.Deformation modeling of InSb IRFPAs under liquid nitrogen shock. Acta Physica Sinica, 2014, 63(15): 156101.doi:10.7498/aps.63.156101 |
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Sang Cui-Cui, Wang Yong-Jun, Wan Jian-Jie, Ding Xiao-Bin, Dong Chen-Zhong.Theoretical study of radiative recombination and the sub-sequent radiative decay processes in highly charged Au ions. Acta Physica Sinica, 2010, 59(6): 3871-3877.doi:10.7498/aps.59.3871 |
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Shi Ying-Long, Dong Chen-Zhong, Zhang Deng-Hong, Fu Yan-Biao.Theoretical study on the dielectronic recombination of highly charged mercury and uranium ions. Acta Physica Sinica, 2008, 57(1): 88-95.doi:10.7498/aps.57.88 |
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Dong Guo-Yi, Li Xiao-Wei, Wei Zhi-Ren, Yang Shao-Peng, Han Li, Fu Guang-Sheng.Investigation of influences of concentration of Mn and Cu dopants on the decay process of photogenerated charge carriers in the ZnS:Mn,Cu luminescence materials. Acta Physica Sinica, 2003, 52(3): 745-750.doi:10.7498/aps.52.745 |
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.. Acta Physica Sinica, 2002, 51(2): 430-433.doi:10.7498/aps.51.430 |
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JIN SHI-RONG, LI AI-ZHEN, CHU JUN-HAO, CHEN SHI-WEI.TRANSIENT DECAY OF PHOTOEXCITED CARRIERS AND PHOTOLUMINESCENCE EFFICIENCY IN QUANTUM WELLS. Acta Physica Sinica, 1997, 46(5): 1001-1010.doi:10.7498/aps.46.1001 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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XU ZHONG-YING, LI YU-ZHANG, XU JUN-YING, XU JI-ZONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA, GE WEI-KUN.HOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES. Acta Physica Sinica, 1987, 36(10): 1336-1343.doi:10.7498/aps.36.1336 |
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XIONG SHI-JIE.STOCHASTIC TRANSPORT PROCESSES OF CARRIERS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES. Acta Physica Sinica, 1986, 35(8): 1010-1018.doi:10.7498/aps.35.1010 |
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XIONG SHI-JIE.RELAXATION PROCESSES OF CARRIERS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES WITH MODULATEDLY DISTRIBUTED RECOMBINATION CENTERS. Acta Physica Sinica, 1986, 35(12): 1624-1633.doi:10.7498/aps.35.1624 |
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YU ZHEN-ZHONG, JIN GANG, CHEN XIN-QIANG, MA KE-JUN.ON THE FACETS AND TWIN FORMATION IN THE GROWTH OF InSb SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(1): 11-18.doi:10.7498/aps.29.11 |
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YU ZHEN-ZHONG, JIN GANG, CHEN XIN-QIANG, MA KE-JUN.ANOMALOUS IMPURITY SEGREGATION IN InSb SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(1): 19-24.doi:10.7498/aps.29.19 |
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SHU HUNG-DAR, LIN LAN-YING.HEAT TREATMENT OF INDIUM ANTIMONIDE. Acta Physica Sinica, 1966, 22(6): 698-707.doi:10.7498/aps.22.698 |
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WU TZU-CHIANG, TANG TING-YUAN.THE NOISE OF THE p-TYPE INDIUM ANTIMONIDE. Acta Physica Sinica, 1966, 22(2): 205-213.doi:10.7498/aps.22.205 |
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HO YU-PING.INTERACTION BETWEEN FREE ELECTRONS AND INTENSIVE LIGHT BEAM——MULTI-PHOTON PROCRSSES OF THE CARRIERS IN SEMICONDUCTORS. Acta Physica Sinica, 1965, 21(1): 37-50.doi:10.7498/aps.21.37 |
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SHAW NAN, LIU YI-HUAN.X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica, 1964, 20(8): 699-704.doi:10.7498/aps.20.699 |
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LIN LAN-YING, SHU HUNG-DAR.THE MECHANICAL DAMAGE OF INDIUM ANTIMONIDE. Acta Physica Sinica, 1964, 20(12): 1268-1277.doi:10.7498/aps.20.1268 |
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.. Acta Physica Sinica, 1962, 18(3): 175-176.doi:10.7498/aps.18.175 |