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β相氧化镓(β-Ga2O3)因具有超宽禁带特性、卓越的机械性能和潜在的成本优势, 在高功率、高频率及光电微纳机电器件领域展现出极佳的应用前景. 本文详细探讨了双端固支结构与圆形鼓面结构的β-Ga2O3纳米机电谐振器的能量耗散机制及如何通过设计优化提高其品质因数(Q值). 首先通过理论分析和COMSOL软件仿真, 深入探讨了Akhiezer效应、热弹性阻尼、支撑阻尼和表面阻尼等能量耗散过程, 并制备了器件, 采用激光干涉法对β-Ga2O3纳米机电谐振器进行实验验证. 结果表明, 表面阻尼与支撑阻尼是当前限制β-Ga2O3纳米机电谐振器Q值的主要因素, 而Akhiezer效应和热弹性阻尼则决定了Q值的上限. 本研究不仅阐明了Ga2O3微纳机电谐振器能量耗散的复杂机制, 也为其带宽调控提供了有价值的指导.
Beta-gallium oxide (β-Ga2O3), an emerging ultrawide bandgap (~4.8 eV) semiconductor, exhibits excellent electrical properties and cost advantages, being made as a promising candidate for high-power, high-frequency, and optoelectronic applications. Furthermore, its superior mechanical properties, including a Young’s modulus of 261 GPa, a mass density of 5950 kg/m³, and an acoustic velocity of 6623 m/s, make it particularly attractive for realizing high-frequency micro- and nanoelectromechanical system (M/NEMS) resonators. In this work, the energy dissipation mechanisms are investigated in two different β-Ga2O3 NEMS resonator geometries – doubly-clamped beams (10.5–20.8 μm length) and circular drumheads (3.3–5.3 μm diameter) – through theoretical analysis, finite element model (FEM) simulations, and experimental measurements under vacuum condition (<50 mTorr). The dominant energy dissipation mechanisms in resonators are investigated, including Akhiezer damping (AKE), thermoelastic damping (TED), clamping loss, and surface loss, by using a combined theoretical and FEM approach. Experimentally, the resonators are made by employing mechanical exfoliation combined with dry transfer techniques, yielding device thickness of 30–500 nm as verified by atomic force microscopy (AFM). Subsequently, laser interferometry is used to characterize the resonator dynamics. The resonant frequency f is obtained in a range of 5–75 MHz and the quality factor Q is approximately 200–1700 obtained through Lorentzian fitting of the resonant spectra, thus verifying the theoretical and simulation results. Our analysis indicates that surface loss and clamping loss are the main limiting factors for the Q values of current β-Ga2O3 resonators. Conversely, AKE and TED are mainly affected by material properties and resonator geometry, thus setting an upper limit for the achievable Q values with f×Q product reaching up to 1014 Hz. Our study provides a comprehensive framework integrating both theoretical analysis and experimental validation for understanding the complex energy dissipation mechanism inside a β-Ga2O3 NEMS resonator, and optimizes Q value through strain engineering and phonon crystal anchoring. These findings provide essential guidance for optimizing the performance and modulating the bandwidth of β-Ga2O3 NEMS resonator in high-frequency and high-power applications. 
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物理量 值 杨氏模量EY[4]/GPa 261 密度ρ[4] /(kg·m–3) 5950 泊松比ν[4] 0.2 声速c[4]/(m·s–1) 6623 声子散射时间τs/s 双端固支: 6.37×10–13
圆形鼓面: 4.89×10–13平均Grüneisen参数γavg[27] 1.018 质量热容Cp[29] /(J·kg–1·K–1) 491 热膨胀系数α[33]/K–1 [100]: 0.10×10–6
[010]: 1.68×10–6
[001]: 1.74×10–6热导率k[28]/(W·m–1·K–1) [100]: 10.9
[010]: 27.0
[001]: 14.5
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