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摘要

采用喷墨打印工艺制备了铟锌锡氧化物(indium-zinc-tin-oxide, IZTO)半导体薄膜, 并应用于底栅顶接触结构薄膜晶体管(thin-film transistor, TFT). 研究了墨水的溶剂成分以及溶质浓度对打印薄膜图案轮廓的影响. 结果表明二元溶剂IZTO墨水中乙二醇溶剂可有效平衡溶质向内的马兰戈尼回流与向外的毛细管流, 避免了单一溶剂墨水下溶质流动不平衡造成IZTO薄膜的咖啡环状沉积轮廓图案, 获得均匀平坦的薄膜图案轮廓和良好接触特性, 接触电阻为820 Ω, 优化后IZTO TFT器件的饱和迁移率达到16.6 cm ²/(V·s), 阈值电压为0.84 V, 开关比高达3.74×10 ⁹, 亚阈值摆幅为0.24 V/dec. 通过打印薄膜凝胶化模型解释了IZTO墨水溶剂成分、溶质浓度与最终薄膜形貌的关系.

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Abstract

Metal oxide thin film transistor has been widely used in flat panel display industry because of its low leakage current, high mobility and large area uniformity. Besides, with the development of printed display technology, inkjet printing process can fabricate the customizable patterns on diverse substrates with no need of vacuum or lithography to be used, thus significantly reducing cost and receiving more and more attention. In this paper, we use inkjet printing technology to prepare a bottom gate bottom contact thin film transistor (TFT) by using indium-zinc-tin-oxide (IZTO) semiconductor. The surface morphology of the printed IZTO film is modified by adjusting the solvent composition and solute concentration of the printing precursor ink. The experimental result show that the use of binary solvents can effectively overcome the coffee ring shape caused by the accumulation of solute edge in the volatilization process of a single solvent, ultimately presenting a uniform and flat contour surface. Further increase in solute concentration is in favor of formation of convex surface topology. The reason for the formation of the flat surface of the oxide film is the balance between the inward Marangoni reflux of the solute and the outward capillary flow during volatilization. In addition, IZTO thin film transistor printed with binary solvents exhibits excellent electrical properties. The ratio of width/length = 50/30 exhibits a high on-off ratio of 1.21×10 ⁹, a high saturation field-effect mobility is 16.6 cm ²/(V·s), a low threshold voltage is 0.84 V, and subthreshold swing is 0.24 V/dec. The uniform and flat active layer thin film pattern can form good contact with the source leakage electrode, and the contact resistances of TFT devices with different width-to-length ratios are less than 1000 Ω, which can reach the basic conditions of high mobility thin film transistors prepared by inkjet printing. Therefore, using solvent mixture provides a universal and simple way to print oxide films with required surface topology, and present a visible path for inkjet printing of high-mobility thin film transistors.

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作者及机构信息

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通信作者:李喜峰,lixifeng@shu.edu.cn

基金项目:国家重点研发计划(批准号: 2022YFB3603805)资助的课题.

Authors and contacts

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Corresponding author:Li Xi-Feng,lixifeng@shu.edu.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3603805).

文章全文: translate this paragraph

参考文献

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施引文献

下载: 全尺寸图片幻灯片

IZTO墨水样品	ρ/(g·cm^–3)	η/cP	γ/(mN·m^–1)	Z
c= 0.2 mol/L, 2-MOE	1.04	4.05	34.4	6.59
c= 0.2 mol/L, 2-MOE+EG	1.07	6.90	38.1	4.14
c= 0.4 mol/L, 2-MOE+EG	1.10	8.44	39.1	3.48

下载: 导出CSV

成膜方式	μ_sat/(cm²·V^–1·s^–1)	V_TH/V	S.S/(V·dec^–1)	I_on/I_off	关态电流/A	文献
喷墨打印	4.63	–1.44	0.18	>10⁷	<10^–12	[8]
喷墨打印	1.3	0.14	0.44	2.3×104	<10^–9	[10]
喷墨打印	4.6	0.9	—	>10⁵	1×10^–10	[28]
喷墨打印	3.0	–0.51	0.21	1.59×10⁷	5×10^–13	[29]
磁控溅射	13.6	1.04	0.18	5.65×10⁶	2×10^–12	[30]
喷墨打印	16.6	0.84	0.24	1.21×10⁹	≤10^–13	本文

下载: 导出CSV

	μ/(cm²·V^–1·s^–1)	V_TH/V	S.S/(mV·dec^–1)
Average value	11±2	0.6±0.15	90±15

下载: 导出CSV

W/L	μ_sat/ (cm²·V^–1·s^–1)	V_TH/ V	S.S/(V·dec^–1)	I_on/I_off
50/30	16.6	0.84	0.24	1.21×10⁹
50/20	14.9	0.73	0.15	2.79×10⁹
50/10	11.5	0.57	0.10	3.74×10⁹

下载: 导出CSV

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