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摘要

在实际静电放电测试时, 发现各种功率金属-氧化物半导体场效应晶体管(MOSFET)的静电放电测试结果均呈现出正反向耐压不对称现象, 而人体与器件接触时的静电放电过程是不区分正反向的. 正反向耐压差异较大对于功率MOSFET或作为静电放电保护器件来说都是无法接受的, 其造成器件失效的问题格外凸显. 本文通过建立SGT-MOSFET, VUMOSFET和VDMOS在静电放电正反向电压下的栅源电容解析模型, 对比分析了三种功率MOSFET器件静电放电正反向耐压不对称及其比值不同的原因, 为器件的静电放电测试及可靠性分析提供了理论依据.

关键词:

Abstract

In the actual human body model (HBM) test, it is found that the electrostatic discharge (ESD) test results of various power metal-oxide-semiconductor field-effect transistor (MOSFET) devices show asymmetry between forward withstand voltage and reverse withstand voltage, while the ESD process does not distinguish between positive direction and negative direction. Large differences between forward and reverse withstand voltages are unacceptable for power MOSFETs or as ESD protection devices. The problem of its causing device failure is particularly pronounced. In this work, by establishing the analytical model of gate-to-source capacitance of SGT-MOSFET, VUMOSFET and VDMOS under the forward and reverse voltages, we comparatively analyze the reasons for the asymmetry of the forward and reverse withstand voltages and their different ratios of the three kinds of power MOSFETs, which provides a theoretical basis for testing the device’s ESD and the analyzing their reliability. It is found that the ESD forward and reverse withstand voltage asymmetry phenomena of different power MOSFET structures are related to the variation of gate-to-source capacitance, caused by the reverse-type layer. When a forward voltage is applied across the gate and source, the device gate-to-source capacitance consists of the oxide layer capacitance around the gate in parallel; when a reverse voltage is applied, the gate-to-source capacitance consists of the virtual gate-to-drain capacitance in series with the inverse layer capacitance and then in parallel with the other oxide layer capacitance around the gate. This results in a decrease of the gate-to-source capacitance at the reverse voltage, making the device reverse withstand voltage greater than the forward withstand voltage. The difference in the ratio of ESD reverse withstand voltage to forward withstand voltage among different devices is related to the change of the capacitance of the inverse layer in the gate-to-source capacitor under reverse voltage caused by the difference in device structure.

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作者及机构信息

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通信作者:王彩琳,wangcailin8511@xaut.edu.cn

基金项目:陕西省“两链融合”重点研发项目(批准号: 2021LLRH-02)和陕西省科学技术厅自然科学基础研究计划(批准号: 2023-JC-QN-0764)资助的课题.

Authors and contacts

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Corresponding author:Wang Cai-Lin,wangcailin8511@xaut.edu.cn

Funds:Project supported by Shaanxi Province “Two Chain” Integration Key Project of China (Grant No. 2021LLRH-02) and the Natural Science Basic Research Program of Science and Technology Department of Shaanxi Province, China (Grant No. 2023-JC-QN-0764).

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参考文献

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施引文献

下载: 全尺寸图片幻灯片

器件类型	样品型号	ESD正向耐压/V	ESD反向耐压/V
SGT-MOSFET	SW036R10E8S	600	1010
	SW050R10E8S	750	1450
	SW050R85E8S	670	1390
	SW050R95E8S	810	1590
	SW083R06VLS	480	830
VUMOSFET	SW065R68E7T	520	1640
	SW067R68E7T	650	2350
	SW068R68E7T	680	1970
	SW065R03VLT	450	1360
	SW018R03VLT	830	2800
VDMOS	SW7N60D	1350	3140
	SW10N60D	1470	3520
	SW12N65D	1530	3690
	SW20N65D	1560	3510
	SW7N80D	1670	3940

下载: 导出CSV

器件类型	样品型号	封装形式	击穿电压/V	阈值电压/V	导通电阻/mΩ
SGT-MOSFET	SW036R10E8S	TO-220	100	3	3.8
	SW050R10E8S	TO-220	100	3	5.7
	SW050R85E8S	TO-263	85	3	5.2
	SW050R95E8S	TO-263	95	3	5.9
	SW083R06VLS	TO-251	60	2	9.6
VUMOSFET	SW065R68E7T	TO-220	68	3	6.3
	SW067R68E7T	TO-220	68	3	6.9
	SW068R68E7T	TO-252	68	3	7.0
	SW065R03VLT	TO-252	30	3	6.6
	SW018R03VLT	DFN5*6	30	1.8	1.6
VDMOS	SW7N60D	TO-220	600	3.5	1.1
	SW10N60D	TO-220F	600	3.5	0.9
	SW12N65D	TO-220F	650	3.5	0.6
	SW20N65D	TO-220F	650	3.7	0.3
	SW7N80D	TO-220F	800	3.5	1.5

下载: 导出CSV

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