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Kagome材料为研究电子关联效应、拓扑物态、非常规超导电性和几何阻挫等新奇物理现象提供了良好的平台. 最近, Kagome超导体 AV 3Sb 5( A= K, Rb, Cs)在凝聚态物理领域引起了广泛关注和研究, 国内外多个课题组通过化学掺杂对其物性进行有效调控, 为进一步理解和认识该体系材料提供了巨大帮助. 本文综述了 AV 3Sb 5掺杂研究的最新进展, 对这一快速发展材料体系的掺杂效应进行了总结, 以促进Kagome超导体 AV 3Sb 5的进一步探索和研究. 具体地说, 回顾了CsV 3Sb 5中Nb, Ta, Ti和Sn的原子掺杂, 以及Cs, O等元素表面掺杂对材料量子效应和电子能带结构的影响, 讨论了掺杂对物性调控的物理机制. 为进一步理解和研究该材料体系的电荷密度波、时间反演对称性破缺、超导电性等丰富量子效应提供相关基础.Material with Kagome lattice provides an excellent platform for studying electronic correlation effects, topological states of matter, unconventional superconductivity, and geometric frustration. The recently discovered Kagome superconductors AV 3Sb 5( A= K, Rb, Cs) have attracted widespread attention in the field of condensed matter physics, and many efforts have been made to elucidate their novel physical properties, such as charge density wave, unconventional superconductivity, and band topology. Meanwhile, many groups have effectively tuned these novel properties through chemical doping, offering a good opportunity for further understanding the materials of this system. In this paper, we comprehensively review the latest research progress of the doping effect of this rapidly developed AV 3Sb 5system, with the objective of further promoting the in-depth research into Kagome superconductor. Specifically, we review the chemical doping in CsV 3Sb 5with elements such as Nb, Ta, Ti, and Sn, and the surface doping with elements Cs or O as well, and describe their influences on the novel quantum properties, especially superconductivity, charge density wave, and electronic band structure of the material. Furthermore, the intricate physical mechanism of doping manipulation is discussed, in order to provide a basic knowledge for further understanding and studying the rich quantum effects of the system, such as charge density waves, time reversal symmetry breaking, and superconductivity.
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] -
掺杂位置 掺杂元素 电荷密度波 超导 反常霍尔效应 能带结构及费米面位置变化 掺杂类型 掺杂极限/% V Nb 抑制 增强 抑制 Γ点电子口袋扩张, 范霍夫奇点上移 等价掺杂 7 V Ta 抑制 增强 抑制 Γ点电子口袋扩张, 范霍夫奇点上移 等价掺杂 14 V Ti 抑制 待定 抑制 费米面降低,Γ点电子口袋减小, 范霍夫奇点上移 空穴 10 V Mo 增强 抑制 — — 电子 3.5 V Cr 抑制 抑制 抑制 — 电子 25 Sb Sn 抑制 双穹顶状 — 费米面降低,Γ点电子口袋减小, 范霍夫奇点上移 空穴 20 Sb As 抑制 增强 抑制 — 等价掺杂 2.3 Cs K 抑制 抑制 — — 等价掺杂 100 Cs Rb 抑制 增强 — — 等价掺杂 100 表面 Cs 抑制 — — 费米面上升,Γ点电子口袋扩张 电子 — 表面 O 抑制 穹顶状 — 范霍夫奇点上移,Γ点电子口袋减小 空穴 — 
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[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71]
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