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在刻蚀工艺中, 通常会在感性耦合等离子体源的下极板上施加偏压源, 以实现对离子能量和离子通量的独立调控. 本文采用整体模型双向耦合一维流体鞘层模型, 在Ar/O 2/Cl 2放电中, 研究了偏压幅值和频率对等离子体特性及离子能量角度分布的影响. 研究结果表明: 当偏压频率为2.26 MHz时, 随着偏压的增加, 除了Cl –离子和ClO +离子的密度先增加后降低最后再增加外, 其余带电粒子、O原子和Cl原子的密度都是先增加后基本保持不变最后再增加. 当偏压频率为13.56和27.12 MHz时, 除了Cl –离子和
$ {\text{Cl}}_2^ + $ 离子外, 其余粒子密度随偏压的演化趋势与低频结果相似. 随着偏压频率的提高, 在低偏压范围内(<200 V), 由于偏压源对等离子体加热显著增加, 导致了带电粒子、O原子和Cl原子的密度增加; 而在高偏压范围内(>300 V), 由于偏压源对等离子体加热先减弱后增强, 导致除了$ {\text{Cl}}_2^ + $ 离子和Cl –离子外, 其余带电粒子、O原子和Cl原子的密度都是先下降后增加的. 此外, 随着偏压频率的增加, 离子能量分布中的高能峰和低能峰彼此靠近, 离子能峰间距变窄, 并最终变成单峰结构. 本文的结论对于优化等离子体刻蚀工艺具有重要意义.In the etching process, a bias source is usually applied to the substrate of the inductively coupled plasma (ICP) to realize independent modulation of the ion energy and ion flux. In this work, a hybrid model, i.e. a global model combined bi-directionally with a fluid sheath model, is employed to investigate the plasma properties and ion energy distribution function (IEDF) in biased inductively coupled Ar/O 2/Cl 2plasmas. The results indicate that at a bias frequency of 2.26 MHz, the Cl –ion density and ClO +ion density first increase with bias voltage rising, and then they decrease, and finally they rise again, which is different from the densities of other charged species, such as O and Cl atoms. At the bias frequency of 13.56 MHz and 27.12 MHz, except Cl –and$ {\text{Cl}}_2^ + $ ions, the evolutions of other species densities with bias voltage are similar to the results at lower bias frequency. The evolution of the species densities with bias frequency depends on the bias voltage. For instance, in the low bias voltage range (< 200 V), the densities of charges species, O and Cl atoms increase with bias frequency increasing due to a significant increase in the heating of the plasma by the bias source. However, when the bias voltage is high, say, higher than 300 V, except$ {\text{Cl}}_2^ + $ and Cl –ions, the densities of other charged species, O and Cl atoms first decrease with bias frequency increasing and then they increase due to a decrease and then an increase in the heating of the plasma by the bias source. In addition, as the bias frequency increases, the peak separation of IEDF becomes narrow, the high energy peak and low energy peak approach each other and they almost merge into one peak at high bias frequency. The results obtained in this work are of significant importance in improving the etching process.-
Keywords:
- inductively coupled plasma/
- bias source/
- hybrid model/
- ion energy/
- ion flux
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基态中性粒子 Ar, O2, O3, O, Cl2(ν= 0), Cl, ClO 激发态中性
粒子Arm, Arr, Ar(4p), O2(a), O(D),
Cl2(ν= 1), Cl2(ν= 2), Cl2(ν= 3)正离子 Ar+, $ {\text{O}}_2^ + $, O+, $ {\text{Cl}}_2^ + $, Cl+, ClO+ 负离子/电子 O–, Cl–, e 
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No. Reaction ${\gamma _l}$ 1 ${\text{Cl + wall }} \to {\text{ }}\dfrac{{1}}{{2}}{\text{C}}{{\text{l}}_{2}}\left( {\nu = {0}} \right)$ 方程(3) 2 ${\text{Cl + wall }} \to {\text{ }}\dfrac{{1}}{{2}}{\text{ClO}}$ 方程(4) 3 ${\text{O + wall }} \to {\text{ }}\dfrac{{1}}{{2}}{{\text{O}}_{2}}$ 0.09 4 ${\text{O}}\left( {\text{D}} \right){\text{ + wall }} \to {\text{ }}\dfrac{{1}}{{2}}{{\text{O}}_{2}}$ 0.09 5 ${\text{C}}{{\text{l}}_{2}}\left( \nu \right){\text{ + wall }} \to {\text{ C}}{{\text{l}}_{2}}\left( {\nu - {1}} \right)$ 1 6 ${{\text{O}}_{2}}\left( {\text{a}} \right){\text{ + wall }} \to {\text{ }}{{\text{O}}_{2}}$ 0.007 7 ${\text{O}}\left( {\text{D}} \right){\text{ + wall }} \to {\text{ O}}$ 0.1 8 ${\text{A}}{{\text{r}}^ * }{\text{ + wall }} \to {\text{ Ar}}$ 1 下载:
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25 V 50 V 75 V 100 V 125 V 150 V 175 V 200 V ${\bar d_{\text{s}}}{\text{ /mm}}$ 4.67 4.75 4.79 4.80 4.81 4.85 4.93 5.03 ${\bar V_{\text{s}}}{\text{ /V}}$ 31.32 55.47 79.98 104.63 129.34 154.1 178.88 203.70 下载:
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