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摘要

距离发现反铁电已有70多年的历史, 其独特的电场诱导相变行为使其在储能、换能器、驱动器、电卡制冷、负电容晶体管、热管理等领域显示出了巨大的应用价值. 随着薄膜生长技术的发展及器件小型化、集成化趋势的需求, 反铁电薄膜受到越来越多的关注. 大量研究表明, 反铁电从块体到薄膜显现出与块体不同的新奇物性, 同时也面临更多挑战, 如尺寸效应使得其反铁电特性在临界厚度下减弱甚至消失等. 在此基础上, 回顾了锆酸铅基反铁电研究的发展历史, 从反铁电的起源、结构、相变到应用等方面进行了讨论. 希望能够吸引更多的研究者关注反铁电薄膜的发展, 探索未知的奥秘, 共同开发更多的新材料和新应用.

关键词:

反铁电/
锆酸铅/
结构/
应用

Abstract

It has been more than 70 years since the first anti-ferroelectric was discovered. Its unique electric-field-induced phase transition behavior shows great potential applications in the fields of energy storage, electrocaloric, negative capacitance, thermal switching, etc. With the development of advanced synthesis technology and the trend of miniaturization and integration of devices, high-quality functional oxide films have received more and more attention. A large number of studies have shown that anti-ferroelectric thin film exhibits more novel properties than bulk, but it also faces more challenges, such as the disappearance of antiferroelectricity under a critical thickness induced by size effect. In this paper, we review the development history of lead zirconate-based anti-ferroelectric thin films, and discuss their structures, phase transitions and applications. We hope that this paper can attract more researchers to pay attention to the development of anti-ferroelectric thin films, so as to develop more new materials and explore new applications.

Keywords:

作者及机构信息

通信作者:陈祖煌,zuhuang@hit.edu.cn

基金项目:广东省基础与应用基础研究基金(批准号: 2020B1515020029)、深圳市科技创新项目(批准号: JCYJ20200109112829287)、中国博士后科学基金(批准号: 2022T150158)、广东省重大人才工程引进类(批准号: 2019QN01C202)和深圳市科技计划(批准号: KQTD20200820113045083)资助的课题.

Authors and contacts

Corresponding author:Chen Zu-Huang,zuhuang@hit.edu.cn

Funds:Project supported by the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2020B1515020029), the Shenzhen Science and Technology Innovation Project, China (Grant No. JCYJ20200109112829287), the China Postdoctoral Science Foundation (Grant No. 2022T150158), the Guangdong Major Talent Introduction Project, China (Grant No. 2019QN01C202), and the Shenzhen Science and Technology Program, China (Grant No. KQTD20200820113045083)

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施引文献

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

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