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随着柔性电子的迅猛发展, 越来越多的新型智能可穿戴电子设备, 逐渐改变人们的生活方式. 同时, 可穿戴器件小型化、柔性化、集成化、低功耗等需求不断提高, 对柔性功能材料的要求越来越高, 特别是亟需具有丰富功能特性的氧化物薄膜材料. 近年来, 随着薄膜生长与剥离技术的进步, 自支撑单晶氧化物薄膜被开发出来. 由于其脱离衬底束缚展现出优异柔性特征的同时, 保持了丰富的磁、电、光、热、力等功能, 在信息存储、智能传感、生物医疗、能源等领域具有广泛的应用前景. 本文从自支撑氧化物薄膜的制备技术出发, 展开介绍了基于铁电、压电、铁磁、金属-绝缘体转变等物理效应的晶体管存储器、能量收集、纳米发电机、应变传感器、储能器件及超导等方面的应用.Flexible electronics have aroused great interest of researchers because of their wide applications in information storage, energy harvesting and wearable device. To realize extraordinary functionalities, freestanding single crystal oxide thin film is utilized due to its super elasticity, easy-to-transfer, and outstanding ferro/electric/magnetic properties. Using the state-of-art synthesis methods, functional oxide films of various materials can be obtained in freestanding phase, which eliminates the restrictions from growth substrate and is transferable to other flexible layers. In this work, we first introduce wet etching and mechanical exfoliation methods to prepare freestanding single crystal oxide thin film, then review their applications in ferroelectric memory, piezoelectric energy harvester, dielectric energy storage, correlated oxide interface, and novel freestanding oxide structure. The recent research progress and future outlooks are finally discussed.
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存储器件 材料体系 开关电压/V 开关比 保持特性/min 铁电功能层厚度/nm 柔性 文献 FTJs PVDF +2/–2 3—10 — 2.2—4.4 是 [67] Pt/BTO/LSMO +2/–3 3 120 3.6 是 [61] Pt/PZT/PEDOT:PSS +3.5/–3 10 — 4.8 是 [62] Pt/PZT/SRO/mica +6/–6 2.4—108 35 — 是 [68] Au/Cu/BTO/LSMO/BTO/Si +3/–2 100 30 2.8 否 [69] Fe FET MoS2/BTO/Au/Ti/SiO2/Si +50/–50 10 — 48 否 [65] Pt/ZnO/PZT/SRO/CFO/mica +6/–6 1.4×104 — 180 是 [70] 
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压电材料 开路电压/V 短路电流/μA 电流密度/(μA·cm–2) 功率密度/(μW·cm–3) 文献 PZT film/PET 200 1.5 150 17500 [24] PMN-PT film/PET 8.2 145 — — [75] BTO film/PU/Plastic 1 0.026 0.19 7000 [19] TOS-BTO Nanoparticles(Nps) /PVDF 20 — — 15.6 [78] PMMA@BTO Nanowires(Nws)/PVDF-TrFE 12.6 1.3 — 0.68 [79] BTO@HBP@PMMA Nws/PVDF 3.4 0.32 — — [80] 下载:
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