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摘要

三元合金CdS _xSe _1–x兼具CdS和CdSe的物理性质, 其带隙可以通过改变元素的组分来调节. 该合金具有优异的光电性能, 在光电器件方面具有潜在的应用价值. 本文首先通过热蒸发法制备了单晶CdS _0.42Se _0.58纳米带器件, 在550 nm光照及1 V偏压下, 器件的光电流与暗电流之比为1.24×10 ³, 光响应度达60.1 A/W, 外量子效率达1.36×10 ⁴%, 探测率达2.16×10 ¹¹Jones, 其上升/下降时间约为41.1/41.5 ms. 其次, 通过Au纳米岛修饰该CdS _0.42Se _0.58纳米带后, 器件的光电性能显著提升, 在550 nm光照及1 V偏压下, 器件的光开关比、响应度、外量子效率及探测率分别提高了5.4倍、11.8倍、11.8倍和10.6倍, 并且上升/下降时间均缩短了近一半. 最后基于Au纳米岛的局域表面等离子共振解释了器件光电性能增强的微观物理机制, 为在不增大器件面积的前提下, 制备高性能光电探测器提供了一种有效策略.

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Abstract

Ternary alloy CdS _xSe _1–xhas the physical properties of CdS and CdSe, and its band gap can be adjusted by changing the component ratio of the elements. The alloy has excellent photoelectric properties and has potential application in optoelectronic devices. Although one has made some research progress of the CdSSe-based photodetectors, their performances are still far from the commercial requirements, so how to improve the performance of the device is the focus of current research. In this work, a single crystal CdS _0.42Se _0.58nanobelt device is first prepared by thermal evaporation. Under 550 nm illumination and 1 V bias, the ratio of photocurrent to dark current of the device is 1.24×10 ³, the responsivity arrives at 60.1 A/W, and the external quantum efficiency reaches 1.36×10 ⁴%, and the detectivity is 2.16×10 ¹¹Jones. Its rise time and fall time are about 41.1/41.5 ms, respectively. Secondly, after the CdSSe nanobelt is decorated by Au nanoislands, the optoelectronic performance of the device is significantly improved. Under 550 nm illumination and 1 V bias, the I _p/ I _dratio, responsivity, external quantum efficiency and detectivity of the device are increased by 5.4, 11.8, 11.8 and 10.6 times, respectively, and the rise time and fall time are both reduced to half of counterparts of single CdSSe nanobelt. Finally, the microscopic physical mechanism of the enhanced optoelectronic performance of the device is explained based on localized surface plasmon resonance of Au nanoislands. After the combination of gold nanoislands and CdSSe nanobelt, the difference in Fermi level between them results in the transfer of electrons from CdSSe nanobelt to Au nanoislands, thus forming an internal electric field at the interface, which is directed from CdSSe nanobelt to Au nanoislands. Under illumination, the electrons in the Au nanoislands acquire enough energy to jump over the Schottky barrier because of localized surface plasmon resonance. These photoexcited hot electrons are trapped and stored in extra energy levels above the conduction band minimum, and then are cooled down to the band edge, thus realizing the transfer of electrons from Au nanoislands to CdSSe nanobelt. Moreover, the internal electric field also greatly promotes the transfer of hot electrons from Au nanoislands to CdSSe nanobelt, and inhibits the recombination of carriers at the interface, resulting in large photocurrent. Our work provides an effective strategy for fabricating high-performance photodetectors without increasing the device area.

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作者及机构信息

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通信作者:谭秋红,tanqiuhong1@126.com; 王前进,qjwang@xtu.edu.cn;

基金项目:国家自然科学基金(批准号: 61564010, 11864046, 11764046)和云南省基础研究面上项目(批准号: 202001AT070064, 202101AT070124)资助的课题.

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Corresponding author:Tan Qiu-Hong,tanqiuhong1@126.com; Wang Qian-Jin,qjwang@xtu.edu.cn;

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 61564010, 11864046, 11764046) and the Basic Research Program of Yunnan Province, China (Grant Nos. 202001AT070064, 202101AT070124).

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施引文献

下载: 全尺寸图片幻灯片

Device structure	Bias voltage/V	EQE/%	R/(A·W^–1)	I_p/I_d	D*/Jones	Rise/decay time	Ref.
CdS_0.76Se_0.24NBs	1	19.1	10.4 (674 nm)	816	—	1.62/4.70 ms	[23]
2D CdS_0.14Se_0.86flaks	5	1.94×10³	703 (450 nm)	23	3.41×10¹⁰	39/39 ms	[50]
CdSe Nanotubes	1	—	76 (氙灯)	1.29×10³	2.75×10¹⁰	1.85/0.2 s	[51]
2D CdS flake	2	—	0.18 (Visible)	10³	2.71×10⁹	14/8 ms	[52]
CdSSe NBs	1	1.36×10⁴	60.1 (550 nm)	1.24×10³	2.16×10¹¹	41.1/41.5 ms	This work
Au NIS@CdSSe NBs	1	1.61×10⁵	711.4 (550 nm)	6.70×10³	2.29×10¹²	22.6/23.0 ms	This work

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