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摘要

采用H等离子体处理p-GaN盖帽层来制备p-GaN栅AlGaN/GaN高电子迁移率晶体管(HEMT). 在p-GaN层表面上先沉积2 nm的Al ₂O ₃薄膜, 以减少H等离子体注入p-GaN时对表面造成的损伤. 经研究表明沉积Al ₂O ₃阻挡层的器件栅极反向泄漏电流降低了一个数量级, 开关比提高了约3倍. 由于栅极泄露电流的减小, 关态击穿电压从410 V提高到780 V. 针对栅极反向泄漏减小的现象, 进行了变温 I _G- V _G测试, 验证了栅极反向泄漏电流的主导机制是二维变程跳跃(Two-dimensional variable range hopping, 2D-VRH)模型. 分析了减小栅极反向电流的原因是由于Al ₂O ₃阻挡层改变了HR-GaN的表面态, 使陷阱能级的活化能升高. 此外, 器件动态特性也表现出更稳定的趋势, 这是Al ₂O ₃薄膜阻挡过多的H等离子体的注入, 使AlGaN势垒和沟道陷阱态数量减少, 电流崩塌效应减弱.

关键词:

Abstract

High electron mobility transistors(HEMTs)show tremendous potentials for high mobility, high breakdown voltage, low conduction, low power consumption, and occupy an important piece of the microelectronics field. The high-resistivity-cap-layer high electron mobility transistor (HRCL-HEMT) is a novel device structure. Based on the hole compensation mechanism, the p-GaN is converted into high resistance semiconductor material by hydrogen plasma implantation. Thus, the surface of the p-GaN layer will have a serious bombardment damage under the hydrogen plasma implantation. In practical work, it is also very challenging in the accurate controlling of the hydrogen injection rate, injection depth and injection uniformity. To achieve the required depth of injection, the injected hydrogen plasma is often more than the required dose or multiple injections times. The energy of hydrogen plasma plays a huge influence on the surface of the p-GaN layer.The leakage current will be generated on the device surface, which deteriorates the electrical performance of the device. In this work, to protect the surface of p-GaN layer, a 2-nm Al ₂O ₃film is deposited on the surface of the p-GaN cap layer to reduce the implantation damage caused by hydrogen plasma treatment. The research shows that after the device deposited Al ₂O ₃film prior to the hydrogen plasma treatment, the gate reverse leakage current is reduced by an order of magnitude, the ratio of I _ONto I _OFFis increased by about 3 times. Meanwhile, the OFF-state breakdown voltage is increased from 410 V to 780 V. In addition, when the bias voltage is 400 V, the values of dynamic R _ONof devices A and B are 1.49 and 1.45 respectively, the device B shows a more stable dynamic performance. To analyze the gate leakage mechanism, a temperature-dependent current I _G- V _Gtesting is carried out, and it is found that the dominant mechanism of gate leakage current is two-dimensional variable range hopping (2D-VRH) at reverse gate voltage. The reason for reducing the gate reverse current is analyzed, and the Al ₂O ₃film increases the activation energy of trap level and changes the surface states of HR-GaN; furthermore, the Al ₂O ₃film blocks the injection of too much H plasma, thereby reducing the density of AlGaN barrier and channel trap states, and weakening the current collapse.

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作者及机构信息

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通信作者:邢艳辉,xingyanhui@bjut.edu.cn; 张宝顺,bszhang2006@sinano.ac.cn;

基金项目:中国科学院青年创新促进会(批准号: 2020321)、国家自然科学基金(批准号: 61904192, 61731019, 61575008, 61775007)和北京市自然科学基金(批准号: 4202010, 4172011)资助的课题.

Authors and contacts

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Corresponding author:Xing Yan-Hui,xingyanhui@bjut.edu.cn; Zhang Bao-Shun,bszhang2006@sinano.ac.cn;

Funds:Project supported by the Youth Innovation Promotion Association of CAS (Grant No. 2020321), and the National Natural Science Foundation of China (Grant Nos. 61904192, 61731019, 61575008, 61775007); Beijing Natural Science Foundation (Grant No.4202010, 4172011).

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施引文献

下载: 全尺寸图片幻灯片

器件E_a/meV	栅极电压/V
器件E_a/meV	–10	–9	–8	–7	–6	–5	–4	–3	–2	–1
A	308	321	332	343	353	366	385	404	433	466
B	382	402	422	439	455	470	489	511	524	531

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