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近六十年来, 以硅为核心材料的半导体技术, 特别是CMOS集成电路技术推动了人类信息社会的深刻变革, 但也逐渐接近其物理极限和工程极限, 全球半导体产业已经进入后摩尔时代. 半导体性碳纳米管具有高迁移率、超薄体等诸多优异的电学特性, 因此成为后摩尔时代新型半导体材料的有力候选. 基于碳纳米管的碳基电子技术历经二十余年发展, 在材料制备、器件物理和晶体管制备等基础性问题中也已经取得了根本性突破, 其产业化进程从原理上看已经没有不可逾越的障碍. 因此, 本文着重介绍了碳基电子技术在后摩尔时代的本征优势, 综述了碳基电子技术的基础性问题、进展和下一步的优化方向, 及其在数字集成电路、射频电子、传感器、三维集成和特种芯片等领域的应用前景. 最后, 本文还分析了碳基电子技术产业化进程中的综合性挑战, 并对其未来发展做出预测和展望.In the past 60 years, silicon-based semiconductor technology has triggered off the profound change of our information society, but it is also gradually approaching to the physical limit and engineering limit as well. Thus, the global semiconductor industry has entered into the post-Moore era. Carbon nanotube has many excellent electronic properties such as high mobility and ultra-thin body, so it has become a hopeful candidate for the new semiconductor material in the post-Moore era. After more than 20 years of development, carbon based electronic technology has made fundamental breakthroughs in many basic problems such as material preparation, Ohmic metal-semiconductor contact and gate engineering. In principle, there is no insurmountable obstacle in its industrialization process now. Therefore, in this paper the intrinsic advantages of carbon based electronic technology in the post-Moore era is introduced, the basic problems, progress and optimization direction of carbon based electronic technology are summarized, the application prospects in the fields of digital circuits, radio frequency electronics, sensing and detection, three-dimensional integration and chips for special applications are presented. Finally, the comprehensive challenges to the industrialization of carbon based electronic technology are analyzed, and its future development is also prospected.
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Structure Ioff/(nA·μm–1) SS/(mV·dec–1) On/off ratio Self-aligned process Scalability FBG 0.49 73 3.84 × 106 No No Normal-spacer 15.85 85 8.91 × 104 Yes Yes HD BOX 5.75 80 6.17 × 105 No No L-shaped-spacer 0.38 70 1.73 × 106 Yes Yes 挑战类别 发展目标 近期 中长期 长期 材料 各指标满足研发需求、制备8 in晶圆 各指标满足碳基超大规模集成电路需求 洁净度达到业界标准、
制备12 in大晶圆器件工艺 接触电阻优化、
栅结构和漏端工程碳基平面集成工艺、
硅基后道工艺兼容碳基三维集成工艺、
硅基前道工艺兼容均一性和可靠性 优化材料均一性和器件工艺可靠性 开发碳基器件和电路的钝化封装工艺 提高超大规模碳基集成电路的良率 电路与系统设计 器件模型及PDK 完整EDA工具 三维集成系统、TPU等新型架构 标准化平台 材料制备表征平台、器件电路测试平台 工艺研发平台、
工艺制造平台碳基芯片生产平台 -
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