In this paper, A Grove model on the homoepitaxial growth of 4H-SiC is presented, based on the structure and growth conditions of CVD system. According to the model analysis, the growth rate of 4H-SiC is quiet influenced by carrier gas flow rate and temperature, which is verified by experiments. Growth rate along the substrate has a bowl-shaped distribution, and the growth rate on the center is slightly lower than on the edge. As the carrier gas flow rate increases, the growth rate controlled by the transport changes into the reaction rate control, the growth rate first increases and then decreases. The position of highest temperature in the actor will be drifted with the carrier gas flow increasing. The reaction rate and the mass transport coefficient increase with the rise of growth temperature, which can cause the increase of growth rate. But the effect of temperature on reaction rate is much greater than on the mass transport. When the temperature rises excessively, the epitaxial growth will be determined by the mass transport. But the high reaction temperature results in forming some particles at the edge of reactor, which can reduce the growth rate, and the particles will have a chance to fall on the epitaxial layer, thus seriously affecting the quality of the epitaxial layer. All the above shows that the growth rate and thickness uniformity can effectively controlled by adjusting the flow rate of hydrogen, the rotational speed of the substrate and the growth temperature.