Within the framework of effective mass approximation, the values of energy eigenvalue En in Ga1-xInxNyAs1-y/GaAs quantum well are theoretically calculated using shooting method. In addition, we calculate the electron-LO phonon scattering and mean scattering rate at different temperatures, well width, N concentrations and In concentrations for an electron initially in the second subband and finally in the ground state using Fermi’s golden rule. It is shown that the electron-LO phonon scattering and mean scattering rate increase with the increase of N concentration under the In concentration constant. The electron-LO phonon scattering and mean scattering rate decrease with the increase of In concentration under the In concentration constant. The electron-LO phonon scattering increases monotonically with the increase of temperature. When the temperature is relatively low, the variation of mean scattering rate is not obvious with the increase of temperature When the temperature is relatively high, mean scattering rate increases with the increase of temperature. The scattering and mean scattering rate increase up to their maxima and then begin to decrease as the well width increases. The maximum value is reached when the well width is about 200 Å. Our calculated results are meaningful and can be used for designing the optoelectronic devices based on Ga1-xInxNyAs1-y/GaAs quantum well.