Thin films of ternary compounds CuxInyN were grown on Si (100) wafers by RF magnetron cosputtering at a low temperature, low power and pure N2 environment. The effect of In incorporation on the structure and physical properties of copper nitride was obvious, which was evaluated by characterizing the film chemical bonding state, structure, electrical and optical properties. In XPS, shift of binding energy, Auger peak and Auger chemical parameters all reflected the chemical changes in the environment. For samples with In content below 8.2 at.%, either the BE increasing of Cu 2p3/2 and In 3d5/2 or the decreasing of N1s could mainly contribute to the Cu-In-N bond formation. For the Cux InyN sample with 4.6% In, indium atoms were consistently confirmed to be incorporated into the body center of Cu3N anti-ReO3 structure as shown by XRD and TEM. The strong (001) preferred orientation of copper nitride crystalline phase was kept predominant in the films until the In content goes up to 10.8 at.%, the texture changed to (111) orientation. The R-T curves of CuxInyN films changed from typical exponential to linear with increasing In. Near constant electrical resistivity in a large temperature range with small TCR of -6/10000 was investigated in the CuxInyN sample with 47.9 at.% In. Moreover, the optical band gap, due to Burstein-Moss effect, was investigated to enhance from 1.02 to 2.51 eV with the In content increasing from 0% to 26.53%, accompanied with band-gap transition from direct to indirect.