Annealing of different temperatures was performed on boron-doped nanocrystalline diamond (BDND) films synthesized by hot filament chemical vapor deposition (HFCVD). Effects of annealing temperature on the microstructural and electrical properties of BDND films were systematically investigated. The Hall-effect results show that smaller resistivity and Hall mobility values as well as higher carrier concentration exist in the 5000 ppm boron-doped nanocrystalline diamond film (NHB) as compared with those in 500 ppm boron-doped nanocrystalline diamond film (NLB). After 1000 ℃ annealing, the Hall mobility of NLB and NHB samples were 53.3 and 39.3 cm2·V-1·s-1, respectively, indicating that annealing increases the Hall mobility and decreases the resistivity of the films. HRTEM, UV, and visible Raman spectroscopic results show that the content of diamond phase in NLB samples is larger than that in NHB samples because higher B-doping concentration results in a greater lattice distortion. After 1000 ℃ annealing, the amount of nano-diamond phase of NLB and NHB samples both increase, indicating that a part of the amorphous carbon transforms into the diamond phase. This provides an opportunity for boron atoms located at the grain boundaries to diffuse into the nano-diamond grains, which increases the concentration of boron in the nano-diamond grains and improves the conductivity of nanocrystalline diamond grains. It is observed that 1000 ℃ annealing treatment is beneficial for lattice perfection of BDND films and reduction of internal stress caused by doping, so that the electrical properties of BDND films are improved. Visible Raman spectra show that the trans-polyacetylene (TPA) peak (1140 cm-1) disappears after 1000 ℃ annealing, which improves the electrical properties of BDND films. It is suggested that the larger the diamond phase content, the better lattice perfection and the less the TPA amount in the annealed BDND samples that prefer to improve the electrical properties of BDND films.