The temperature dependences of electrical resistivity for Sr-substituted compounds Y1-xSrxCoO3 (x=0, 0.01, 0.05, 0.10, 0.15, 0.20), prepared successfully by sol-gel process, are investigated in a temperature range from 20 to 720 K. The results indicate that with the increase of doping content of Sr the resistivity of Y1-xSrxCoO3 decreases remarkably, which is found to be caused by the increase of carrier concentration. In a temperature range below 330 and 260 K for the sample x=0 and 0.01, the relationship of resistivity versus temperature processes exponential relationship lnρ∝1/T, with conduction activation energy 0.2950 and 0.1461 eV for the sample x=0 and 0.01 respectively. Moreover, experiments show that the relationship lnρ∝1/T exists only in high-temperature regime for the heavily doped samples; at low temperatures Mott’s law lnρ∝T-1/4 is observed, indicating that heavy doping produces strong potential, which leads to the formation of considerable localized state. By fitting the experimental data to Mott’s T-1/4 law, the density of localized states N(EF) at Fermi level is estimated, which is found to increase with doping content increasing.