Several methods of fabricating chalcogenide thin films are introduced. In this paper, thermal evaporation and radio frequency methods are used to fabricate Ge-Sb-Se thin films. The thicknesses and roughnesses of the films are measured by surface profile-meter. The film growth rates are calculated. The component difference between film and target material is tested by X-ray photoelectron spectroscopy. The third-order optical nonlinearity and the transmission spectra of films fabricated by thermal evaporation are investigated using femto-second Z-scan method and spectrophotometer, to obtain the values of nonlinear refraction, nonlinear absorption and thickness of films. The results show that the films fabricated by thermal evaporation have excellent physical structures and optical properties, and possess promising potential applications in integrated optical devices.