Using Sn and SnO powder as source material, SnO2 one-dimensional nanostructures (nanowires, nanorods, nanobelt and nanoneedles) with controllable diameters were successfully prepared by chemical vapor deposition. The nanostructure and morphology of the products depend strongly on the proportion of oxygen in the growth chamber, which can be altered by adjusting the proportion of SnO in the source material or the proportion of oxygen in the carrier gas. It is crucial to adjust the relative contents of Sn and O atoms in the region of high temperature growth of the Si wafer during controlled preparation of SnO2 one-dimensional nanostructures. We will also discuss the growth mechanism of SnO2 one-dimensional nanostructures under different growth conditions.