The metal induced crystallization with chemical source on different silicon based films is studied. All amorphous silicon films deposited by LPCVD, RF-PECVD and VHF-PECVD have been crystallized. However, the a-Si films prepared by VHF-PECVD seems to have crystallized better. The crystallization was also affected by the concentration of the chemical solution. Under a certain conditions, the polycrystalline silicon crystallized with the solution of 10000ppm has larger grain size than that with 5000ppm solution. The annealing atmosphere also affects the crystallization process. Compared with the physical inducing source, the chemical inducing source gives different micro-crystallization structures. For the metal induced crystallization, the chemical source tends to be more advantageous.