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在采用引上法工艺生长掺钕钇铝石榴石(YAG:Nd)单晶时,为了要得到结构完善的激光晶体,必须设法降低晶体中的位错密度。通过一系列工作,认为在晶体生长过程中,位错走向与固液界面保持垂直的关系。在由凸的固液界面形成小晶面的晶体中,位错密度低的原因是因为凸的固液界面可使晶体中心部分的位错散失在边稜以外。因此,采用合适的工艺条件:即在生长过程中有意识地改变固液界面形状,可使晶体达到既能消除小晶面,又降低位错密度的目的。For high perfection of structure in Nd-YAG laser crystals grown by the Czo-chralski method, the dislocation density of the crystals must be decreased. Research study seems to indicate that the direction of dislocation propagation is perpendicular to the solid-liquid interface. In crystals grown with a Convex solid-liquid interface, the low dislocation density is due to spreading out of the dislocations in the central part towards the surrounding areas and the edges. Hence, by applying suitable technology i. e. intentionally changing the shape of the solid-liquid interface, we can obtain crystals in which not only the dislocations are decreased, but also the facets are eliminated.
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