The electrical conductivity, Hall coefficient, and magneto-resistance effect of n and p type InSb under temperatures 80-500°K have been measured, the impurity concentrations (after compensation) of samples varying in the range of 4×1013—7×1017cm-3.From results of measurement, values of intrinsic carrier concentrations, energy gap, and electron mobilities are presented. The scattering mechanisms for the electrons and the probable causes for the fact that the magneto-resistance is linearly field-dependent in large magnetic fields are discussed.