- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

摘要

采用喷墨打印工艺制备了铟锌锡氧化物(indium-zinc-tin-oxide, IZTO)半导体薄膜, 并应用于底栅顶接触结构薄膜晶体管(thin-film transistor, TFT). 研究了墨水的溶剂成分以及溶质浓度对打印薄膜图案轮廓的影响. 结果表明二元溶剂IZTO墨水中乙二醇溶剂可有效平衡溶质向内的马兰戈尼回流与向外的毛细管流, 避免了单一溶剂墨水下溶质流动不平衡造成IZTO薄膜的咖啡环状沉积轮廓图案, 获得均匀平坦的薄膜图案轮廓和良好接触特性, 接触电阻为820 Ω, 优化后IZTO TFT器件的饱和迁移率达到16.6 cm ²/(V·s), 阈值电压为0.84 V, 开关比高达3.74×10 ⁹, 亚阈值摆幅为0.24 V/dec. 通过打印薄膜凝胶化模型解释了IZTO墨水溶剂成分、溶质浓度与最终薄膜形貌的关系.

关键词:

Abstract

Metal oxide thin film transistor has been widely used in flat panel display industry because of its low leakage current, high mobility and large area uniformity. Besides, with the development of printed display technology, inkjet printing process can fabricate the customizable patterns on diverse substrates with no need of vacuum or lithography to be used, thus significantly reducing cost and receiving more and more attention. In this paper, we use inkjet printing technology to prepare a bottom gate bottom contact thin film transistor (TFT) by using indium-zinc-tin-oxide (IZTO) semiconductor. The surface morphology of the printed IZTO film is modified by adjusting the solvent composition and solute concentration of the printing precursor ink. The experimental result show that the use of binary solvents can effectively overcome the coffee ring shape caused by the accumulation of solute edge in the volatilization process of a single solvent, ultimately presenting a uniform and flat contour surface. Further increase in solute concentration is in favor of formation of convex surface topology. The reason for the formation of the flat surface of the oxide film is the balance between the inward Marangoni reflux of the solute and the outward capillary flow during volatilization. In addition, IZTO thin film transistor printed with binary solvents exhibits excellent electrical properties. The ratio of width/length = 50/30 exhibits a high on-off ratio of 1.21×10 ⁹, a high saturation field-effect mobility is 16.6 cm ²/(V·s), a low threshold voltage is 0.84 V, and subthreshold swing is 0.24 V/dec. The uniform and flat active layer thin film pattern can form good contact with the source leakage electrode, and the contact resistances of TFT devices with different width-to-length ratios are less than 1000 Ω, which can reach the basic conditions of high mobility thin film transistors prepared by inkjet printing. Therefore, using solvent mixture provides a universal and simple way to print oxide films with required surface topology, and present a visible path for inkjet printing of high-mobility thin film transistors.

Keywords:

作者及机构信息

1.
2.

通信作者:李喜峰,lixifeng@shu.edu.cn

基金项目:国家重点研发计划(批准号: 2022YFB3603805)资助的课题.

Authors and contacts

1.
2.

Corresponding author:Li Xi-Feng,lixifeng@shu.edu.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3603805).

文章全文: translate this paragraph

参考文献

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]

施引文献

下载: 全尺寸图片幻灯片

IZTO墨水样品	ρ/(g·cm^–3)	η/cP	γ/(mN·m^–1)	Z
c= 0.2 mol/L, 2-MOE	1.04	4.05	34.4	6.59
c= 0.2 mol/L, 2-MOE+EG	1.07	6.90	38.1	4.14
c= 0.4 mol/L, 2-MOE+EG	1.10	8.44	39.1	3.48

下载: 导出CSV

成膜方式	μ_sat/(cm²·V^–1·s^–1)	V_TH/V	S.S/(V·dec^–1)	I_on/I_off	关态电流/A	文献
喷墨打印	4.63	–1.44	0.18	>10⁷	<10^–12	[8]
喷墨打印	1.3	0.14	0.44	2.3×104	<10^–9	[10]
喷墨打印	4.6	0.9	—	>10⁵	1×10^–10	[28]
喷墨打印	3.0	–0.51	0.21	1.59×10⁷	5×10^–13	[29]
磁控溅射	13.6	1.04	0.18	5.65×10⁶	2×10^–12	[30]
喷墨打印	16.6	0.84	0.24	1.21×10⁹	≤10^–13	本文

下载: 导出CSV

	μ/(cm²·V^–1·s^–1)	V_TH/V	S.S/(mV·dec^–1)
Average value	11±2	0.6±0.15	90±15

下载: 导出CSV

W/L	μ_sat/ (cm²·V^–1·s^–1)	V_TH/ V	S.S/(V·dec^–1)	I_on/I_off
50/30	16.6	0.84	0.24	1.21×10⁹
50/20	14.9	0.73	0.15	2.79×10⁹
50/10	11.5	0.57	0.10	3.74×10⁹

下载: 导出CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]

[1]	张雪, KimBokyung, LeeHyeonju, ParkJaehoon.低温快速制备基于溶液工艺的高性能氧化铟薄膜及晶体管. 必威体育下载 , 2024, 73(9): 096802.doi:10.7498/aps.73.20240082
[2]	宋家宁, 毛雨, 王俊杰, 李丹阳, 欧家琦, 彭俊彪.适用于喷墨打印制备发光二极管的ZnO量子点配体研究. 必威体育下载 , 2023, 72(13): 137301.doi:10.7498/aps.72.20230312
[3]	徐华, 刘京栋, 蔡炜, 李民, 徐苗, 陶洪, 邹建华, 彭俊彪.N₂O处理对背沟刻蚀金属氧化物薄膜晶体管性能的影响. 必威体育下载 , 2022, 71(5): 058503.doi:10.7498/aps.71.20211350
[4]	朱宇博, 徐华, 李民, 徐苗, 彭俊彪.镨掺杂铟镓氧化物薄膜晶体管的低频噪声特性分析. 必威体育下载 , 2021, 70(16): 168501.doi:10.7498/aps.70.20210368
[5]	刘贤哲, 张旭, 陶洪, 黄健朗, 黄江夏, 陈艺涛, 袁炜健, 姚日晖, 宁洪龙, 彭俊彪.溶胶-凝胶法制备氧化锡基薄膜及薄膜晶体管的研究进展. 必威体育下载 , 2020, 69(22): 228102.doi:10.7498/aps.69.20200653
[6]	覃婷, 黄生祥, 廖聪维, 于天宝, 罗衡, 刘胜, 邓联文.铟镓锌氧薄膜晶体管的悬浮栅效应研究. 必威体育下载 , 2018, 67(4): 047302.doi:10.7498/aps.67.20172325
[7]	邵龑, 丁士进.氢元素对铟镓锌氧化物薄膜晶体管性能的影响. 必威体育下载 , 2018, 67(9): 098502.doi:10.7498/aps.67.20180074
[8]	王静, 刘远, 刘玉荣, 吴为敬, 罗心月, 刘凯, 李斌, 恩云飞.铟锌氧化物薄膜晶体管局域态分布的提取方法. 必威体育下载 , 2016, 65(12): 128501.doi:10.7498/aps.65.128501
[9]	兰林锋, 张鹏, 彭俊彪.氧化物薄膜晶体管研究进展. 必威体育下载 , 2016, 65(12): 128504.doi:10.7498/aps.65.128504
[10]	宁洪龙, 胡诗犇, 朱峰, 姚日晖, 徐苗, 邹建华, 陶洪, 徐瑞霞, 徐华, 王磊, 兰林锋, 彭俊彪.铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善. 必威体育下载 , 2015, 64(12): 126103.doi:10.7498/aps.64.126103
[11]	高娅娜, 李喜峰, 张建华.溶胶凝胶法制备高性能锆铝氧化物作为绝缘层的薄膜晶体管. 必威体育下载 , 2014, 63(11): 118502.doi:10.7498/aps.63.118502
[12]	刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣.非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析. 必威体育下载 , 2014, 63(9): 098503.doi:10.7498/aps.63.098503
[13]	徐华, 兰林锋, 李民, 罗东向, 肖鹏, 林振国, 宁洪龙, 彭俊彪.源漏电极的制备对氧化物薄膜晶体管性能的影响. 必威体育下载 , 2014, 63(3): 038501.doi:10.7498/aps.63.038501
[14]	吴萍, 张杰, 李喜峰, 陈凌翔, 汪雷, 吕建国.室温生长ZnO薄膜晶体管的紫外响应特性. 必威体育下载 , 2013, 62(1): 018101.doi:10.7498/aps.62.018101
[15]	李帅帅, 梁朝旭, 王雪霞, 李延辉, 宋淑梅, 辛艳青, 杨田林.高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究. 必威体育下载 , 2013, 62(7): 077302.doi:10.7498/aps.62.077302
[16]	陈晓雪, 姚若河.基于表面势的氢化非晶硅薄膜晶体管直流特性研究. 必威体育下载 , 2012, 61(23): 237104.doi:10.7498/aps.61.237104
[17]	强蕾, 姚若河.非晶硅薄膜晶体管沟道中阈值电压及温度的分布. 必威体育下载 , 2012, 61(8): 087303.doi:10.7498/aps.61.087303
[18]	赵孔胜, 轩瑞杰, 韩笑, 张耕铭.基于氧化铟锡的无结低电压薄膜晶体管. 必威体育下载 , 2012, 61(19): 197201.doi:10.7498/aps.61.197201
[19]	王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢.氧化锌锡薄膜晶体管的研究. 必威体育下载 , 2011, 60(3): 037305.doi:10.7498/aps.60.037305
[20]	徐天宁, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健.In2O3 透明薄膜晶体管的制备及其电学性能的研究. 必威体育下载 , 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018

计量

文章访问数:1017
PDF下载量:86
被引次数:0

搜索

留言板