As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detector is one of the key performance indicators. Herein a noise power spectrum analysis method is introduced in detail, which can accurately and effectively analyze the noise spectrum of kinetic inductance detector in a wide frequency range. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting the appropriate frequency resolutions for different frequency bands. This method is used to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micromachining processes. We deposite a 25-nm-thick aluminum film on high-resistivity silicon substrate for one device, while place one silicon nitride (SiN _x) film on the top and one on the bottom of the aluminum film for another device. It is found that the frequency noise of the device with two silicon nitride films is about 25% to 50% of the bare aluminum device. Using this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor designs. We investigate the noise properties of these devices at different microwave driven power and bath temperatures, and the experimental results show typical two-level system noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detector, and also paves the way to developing low-noise aluminum kinetic inductance detectors for terahertz imaging, photon-counting and energy-resolving applications.