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摘要

拓扑材料和二维材料等新型量子材料, 为自旋电子器件的研究与发展提供了新契机. 这些量子材料不但有助于提高电荷-自旋转换效率及提供高质量异质结界面, 从而改善器件表现, 更由于它们丰富的相互作用和耦合关系, 能提供新奇物理现象和新的物性调控机制, 在自旋电子器件方面具有潜在的应用价值. 拓扑材料和二维材料, 尤其是层状拓扑材料、二维磁性材料以及它们组成的异质结的相关研究, 取得了丰硕的成果, 兼顾了启发性与及时的实用性. 本文将综述这些新型量子材料的近期研究成果: 首先重点介绍拓扑材料在自旋轨道力矩器件中实现的突破; 其次着重总结二维磁性材料的特性及其在自旋电子器件中的应用; 最后将进一步讨论由拓扑材料/二维磁性材料组成的全范德瓦耳斯异质结的研究进展.

关键词:

Abstract

Novel quantum materials such as topological materials, two-dimensional materials, create new opportunities for the spintronic devices. These materials can improve the charge-spin conversion efficiency, provide high-quality interface, and enhance the energy efficiency for spintronic devices. In addition, they have rich interactions and coupling effects, which provides a perfect platform for finding new physics and novel methods to control the spintronic properties. Many inspiring results have been reported regarding the research on topological materials and two-dimensional materials, especially the layered topological and two-dimensional magnetic materials, and their heterostructures. This paper reviews the recent achievements of these novel quantum materials on spintronic applications. Firstly the breakthroughs that topological materials have been made in spin-orbit torque devices is introduced, then two-dimensional magnetic materials and their performances in spintronic devices are presented, finally the research progress of topological materials/two-dimensional magnetic materials heterostructures is discussed. This review can help to get a comprehensive understanding of the development of these novel quantum materials in the field of spintronics and inspire new ideas of research on these novel materials.

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作者及机构信息

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通信作者:李京峰,lijingfeng@sslab.org.cn; 吴昊,wuhao1@sslab.org.cn

基金项目:国家重点研发计划 (批准号: 2022YFA1402801)、国家自然科学基金 (批准号: 52271239)和广东省基础与应用基础研究基金 (批准号: 2022B1515120058, 2022A1515110648) 资助的课题.

Authors and contacts

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Corresponding author:Li Jing-Feng,lijingfeng@sslab.org.cn; Wu Hao,wuhao1@sslab.org.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1402801), the National Natural Science Foundation of China (Grant No. 52271239), and the Basic and Applied Basic Research Foundation of Guangdong Province, China (Grant Nos. 2022B1515120058, 2022A1515110648).

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参考文献

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施引文献

下载: 全尺寸图片幻灯片

异质结构	θ_SH	J_c/(10⁴A⋅cm^–2)	生长方法	测试方法
(CrBiSb)₂Te₃/(BiSb)₂Te₃^[58]	140—425 (1.9 K)	8.9	MBE	S-H
Bi₂Se₃/CoFeB^[47]	1—1.75	60.0	MBE	S-F
Bi₂Se₃/Ag/CoFeB^[48]	0.1—0.5	58.0	MBE	S-F
(BiSb)₂Te₃/GdFeCo^[53]	3.0	12.0	MBE	S-H
(BiSb)₂Te₃/Ti/CoFeB^[54]	2.5	52.0	MBE	S-H
BiSb/MnGa^[51]	52	150.0	MBE	L-S
(BiSb)₂Te₃/Mo/CoFeB^[50]	2.66	30.0	MBE	S-H
(BiSb)₂Te₃/Ti/CoFeB^[64]	1.16	10.0	MBE	S-H
BiSe/CoFeB^[52]	18.62	23.0	Sputter	S-H
Bi₂Se₃/NiFe^[60]	2.18	—	Sputter	S-H
Pt/Co/Bi₂Se₃^[63]	0.35	350.0	Sputter	S-H
Pt/Co/(BiSb)₂Te₃^[62]	0.77	83.0	Sputter	S-H

下载: 导出CSV

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