-
III族氮化物半导体由于包含了宽的直接禁带宽度、高击穿场强、高电子饱和速度、高电子迁移率等优异的性质, 自从发展以来便成为半导体领域中的一个热点. 并且由于其禁带宽度可以从近紫外涵盖到红外区域, 因此在传统半导体所难以实现的短波长光电子器件领域, 也具有广阔的应用前景. 原子层沉积由于其特殊的沉积机制可以在较低的温度下实现III族氮化物半导体的高质量制备, 通过调整原子层沉积的循环比也可以方便地调整合金材料中的成分. 发展至今, 原子层沉积已经成为制备III族氮化物及其合金材料的一种重要方式. 因此, 本文着重介绍了近期使用原子层沉积进行III族氮化物半导体及其合金的沉积及应用, 包括使用不同前驱体、不同方式、不同类型原子层沉积, 在不同温度、不同衬底上进行氮化物半导体及其合金的沉积. 随后讨论了原子层沉积制备的III族氮化物材料在不同器件中的应用. 最后总结了原子层沉积在制备III族氮化物半导体中的前景和挑战.Group III nitride semiconductors, such as GaN, AlN, and InN, are an important class of compound semiconductor material, and have attracted much attention, because of their unique physicochemical properties. These semiconductors possess excellent characteristics, such as wide direct bandgap, high breakdown field strength, high electron mobility, and good stability, and thus are called third-generation semiconductors. Their alloy materials can adjust their bandgaps by changing the type or proportion of group III elements, covering a wide wavelength range from near-ultraviolet to infrared, thereby achieving wavelength selectivity in optoelectronic devices. Atomic layer deposition (ALD) is a unique technique that produces high-quality group III nitride films at low temperatures. The ALD has become an important method of preparing group III nitrides and their alloys. The alloy composition can be easily controlled by adjusting the ALD cycle ratio. This review highlights recent work on the growth and application of group III nitride semiconductors and their alloys by using ALD. The work is summarized according to similarities so as to make it easier to understand the progress and focus of related research. Firstly, this review summarizes binary nitrides with a focus on their mechanism and application. In the section on mechanism investigation, the review categorizes and summarizes the effects of ALD precursor material, substrate, temperature, ALD type, and other conditions on film quality. This demonstrates the effects of different conditions on film growth behavior and quality. The section on application exploration primarily introduces the use of group III nitride films in various devices through ALD, analyzes the enhancing effects of group III nitrides on these devices, and explores the underlying mechanisms. Additionally, this section discusses the growth of group III nitride alloys through ALD, summarizing different deposition methods and conditions. Regarding the ALD growth of group III nitride semiconductors, there is more research on the ALD growth of AlN and GaN, and less research on InN and its alloys. Additionally, there is less research on the ALD growth of GaN for applications, as it is still in the exploratory stage, while there is more research on the ALD growth of AlN for applications. Finally, this review points out the prospects and challenges of ALD in preparation of group III nitride semiconductors and their alloys.
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97] [98] [99] [100] [101] [102] [103] -
材料 金属前驱体 氮前驱体 沉积温度/ ℃ 沉积衬底 应用 ALD类型 等离子体功率/W 参考文献 GaN TEG Ar/N2/H2(1∶3∶6) 350 Si (100) 薄膜生长 PE-ALD 60 [32] GaN TEG Ar/N2/H2(1∶3∶6) 350 Si (100) 薄膜生长 PE-ALD 60 [33] GaN TEG Ar/N2/H2(1∶3∶6) 350 c-sapphire 薄膜生长 PE-ALD 60 [34] GaN TEG N2/H2 200 Si (100) 薄膜生长 HCPA-ALD 300 [36] GaN TMG N2/H2 120—240 Si (100) 薄膜生长 HCP-ALD 50—250 [37] GaN TEG N2/H2 200 sapphire 薄膜生长 HCPA-ALD 300 [38] GaN TEG NH3/Ar 160—350 Si (100) 薄膜生长 PE-ALD 2000 [39] GaN TEG N2/H2 300 sapphire (0001) 薄膜生长 PE-ALD 50和 300 [40] GaN Ga(NMe2)3 NH3/Ar 130—250 Si (100)
4H-SiC (0002)薄膜生长 PE-ALD 2800 [41] GaN Ga(NMe2)3 NH3/Ar 130—250 Si (100), 4H-SiC (0002) 薄膜生长 PE-ALD 2800 [42] GaN TEG Ar/N2/H2(1∶3∶6) 350 multilayer graphene 薄膜生长 PE-ALD 60 [43] GaN TEG Ar/N2/H2(1∶3∶6) 300 graphene 薄膜生长 PE-ALD 60 [44] GaN TEG Ar/N2/H2(1∶3∶6) ≤290 stainless steel 薄膜生长 PE-ALD 60 [45] GaN TEG Ar/N2/H2(1∶3∶6) 200—300 Kapton 薄膜生长 PE-ALD 60 [46] GaN TEG Ar/N2/H2(1∶3∶6) 260 MoS2 薄膜生长 PE-ALD 60 [47] GaN TEG Ar/N2/H2(1∶3∶6) 260, 320 MoS2 薄膜生长 PE-ALD 60 [48] GaN TEG Ar/N2/H2(1∶3∶6) 280 FTO 薄膜生长 PE-ALD 60 [49] GaN TEG Ar/N2/H2(1∶3∶6) 280 FTO 钙钛矿太阳能电池 PE-ALD 60 [50] GaN TEG Ar/N2/H2(1∶3∶6) 200—280 — 量子点太阳能电池 PE-ALD 60 [51] AlN AlCl3 NH3/Ar/H2 350 p-Si (100) 薄膜生长 PE-ALD 150 [52] AlN TMA Ar/N2/H2(1∶3∶6) 350—300 Si (100) 薄膜生长 PE-ALD 60 [53] AlN TMA Ar/N2/H2(1∶3∶6) 250 Si (100), Si (111)
sapphire薄膜生长 PE-ALD 60 [54] AlN TMA NH3 200—300 Si, sapphire 薄膜生长 PE-ALD 2500 [55] AlN TMA NH3 300 GaN 薄膜生长 PE-ALD 200 [56] AlN TMA N2/H2 200 Si (100) 薄膜生长 PE-ALD 300 [57] AlN TMA Ar/N2 300 (Homemade substrates) MEMS PE-ALD 975 [58] AlN TMA H2plasma, NH3 325—350 SiC 薄膜生长 PE-ALD 1800 [59] TMA NH3 325—400 SiC T-ALD — AlN TMA N2/H2 300 4H-SiC 薄膜生长 PE-ALD 50—300 [60] AlN TMA NH3(Ar) 300 Si (100), Si (111) 薄膜生长 PE-ALD 100, 200 [61] AlN TMA NH3 350 Si 薄膜生长 PE-ALD(ICP) 200
600[62] PE-ALD(CCP) 200 AlN Al(C4H9)3 N2H5Cl 200—350 — 薄膜生长 T-ALD — [63] AlN TMA N2/H2 300 Si (100) 薄膜生长, 电容器 PE-ALD 300 [64] AlN TMA Ar/N2/H2 100—250 Si (100) 薄膜生长 HCPA-ALD 25—200 [65] AlN TMA Ar/N2/H2 100—250 Si (100) 薄膜生长 HCPA-ALD 25—200 [66] AlN TMA NH3 295—342 Si, TiN 薄膜生长 T-ALD — [67] AlN TMA N2H4 175—350 p-Si 薄膜生长 T-ALD — [68] AlN TMA Monomethylhydrazine(MMH) 375—475 Si (100) 薄膜生长 T-ALD — [69] AlN 三(二甲氨基)铝 NH3 300 p-Si 薄膜生长 T-ALD — [70] AlN TMA NH3 400 GaN/AlGaN MIS-HEMT T-ALD — [71] AlN TMA NH3 360 GaN MIS-HEMT T-ALD — [72] AlN TMA N2& NH3 300, 350 AlGaN HEMT PE-ALD 2800 [73] AlN TMA NH3 400 AlGaN HEMT T-ALD — [74] AlN TMA N2/H2 300 p-GaN LED PE-ALD — [75] AlN TMA N2 350 AlGaN Schottky diodes PE-ALD 2800 [76] AlN TMA NH3 340 GaN 异质结 T-ALD — [77] AlN TMA NH3 300 GaN 薄膜生长, 异质结 PE-ALD 200 [78] AlN TMA NH3 335 c-sapphire 异质结 T-ALD — [79] InN TMI Ar/N2 250 ± 20 sapphire 薄膜生长 PE-ALD 300 [80] InN TMI N2/H2 200 sapphire 薄膜生长 HCPA-ALD 300 [81] InN TMI NH3 240—320 Si (100) 薄膜生长 PE-ALD 2400—2800 [82] InN TMI N2, Ar/N2, Ar/N2/H2 120—240 Si (100) 薄膜生长 HCP-ALD 50—200 [83] InN TMI N2/Ar 250 GaN (0001) 薄膜生长 PE-ALD 300 [84] InN Tris (N, N-dimethyl-N', N''-diisopropylguanidinato)
indium (III), Tris (N, N'-diisopropylamidinato) indium
(III), Tris(N, N'-diisopropylformamidinato) indium (III)Ar/NH3 200—280 Si (100) 薄膜生长 PE-ALD 2800 [85] InN Tris(1,3-diisopropyltriazenide)
indium (III)NH3(Ar/NH3) 200—400 Si, 4H-SiC 薄膜生长 PE-ALD 2800 [86] InN TMI N2 190—310 Si (100), Al2O3(0001), ZnO (0001) 薄膜生长 PE-ALD 100—200 [87] InN TMI N2(Ar) 150—300 glass, polyimide 薄膜生长 PE-ALD 200 [88] InN TMI N2 180—320 GaN (0001) 薄膜生长 PE-ALD 300 [89] InN TMI NH3/Ar 320 4H-SiC 薄膜生长 PE-ALD 2800 [90] InN TMI Ar/N2/H2(1∶3∶6) 200—300 Si (100) 薄膜生长 PE-ALD 60 [91] 
下载:
导出CSV
材料 金属前驱体 氮前驱体 沉积温度/ ℃ 沉积衬底 应用 ALD类型 等离子体功率/W 参考文献 InGaN TMI, TEG N2/H2, N2 200 Si, quartz 薄膜生长 HCPA-ALD 300 [95] InGaN Ga(III) and In(III) triazenides NH3/Ar 350 Si (100)
4H-SiC (0001)薄膜生长 PE-ALD 2800 [96] AlGaN TMA, TMG NH3/N2/H2 200 Si (100), Si (111),c-sapphire 薄膜生长 HCPA-ALD 300 [97] AlGaN TMA, TMI, TMG N2/Ar 350—450 Si (100),a-sapphire, GaN/a-sapphire 薄膜生长 PE-ALD 300 [98] InAlN 340—300 InGaN AlGaN
InGaNTMG, TMA, TMI N2/H2 220—300 Si 薄膜生长 PE-ALD 280 [99] AlGaN TMA&TEG NH3& N2 342 p-Si (100), TiN/SiO2/Si 薄膜生长 T-ALD — [100] AlGaN TMA, TEG NH3 335 c-GaN 异质结 ALD — [101] AlGaN TMA. TEG NH3 335 c-GaN 异质结 T-ALD — [102] AlGaN TEG NH3 335 ℃ GaN 异质结 T-ALD — [103] 下载:
导出CSV
-
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97] [98] [99] [100] [101] [102] [103]
下载:
计量
- 文章访问数:3539
- PDF下载量:127
- 被引次数:0