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摘要

过渡金属硫族化合物由于其具有独特的结构和性质, 在光电子学、纳米电子学、储能器件、电催化等领域具有广泛的应用前景, 是一类被持续关注的代表性二维层状材料. 在材料应用过程中, 对材料掺杂特性的调控会极大地改变器件的响应性能. 因而, 对利用掺杂手段调控过渡金属硫族化合物器件响应性能的研究具有重要的意义. 电化学离子插层方法的发展为二维材料的掺杂调控提供了新的手段. 本文以WS ₂为例, 采用电化学离子插层方法对厚层WS ₂的掺杂特性进行优化, 观察到离子插入后器件电导率的显著增强(约200倍), 以及栅压对器件光电响应性能的有效且可逆的调控. 本文通过栅压控制离子插层的方法实现对WS ₂器件光电响应的可逆可循环调节, 为利用离子插层方法调控二维材料光电器件响应性能研究提供了实验基础.

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Abstract

Transition metal dichalcogenides have emerged as a prominent class of two-dimensional layered material, capturing sustained attention from researchers due to their unique structures and properties. These distinctive characteristics render transition metal dichalcogenides highly versatile in numerous fields, including optoelectronics, nanoelectronics, energy storage devices, and electrocatalysis. In particular, the ability to modulate the doping characteristics of these materials plays a crucial role in improving the photoelectric response performance of devices, making it imperative to investigate and understand such effects. In recent years, the electrochemical ion intercalation technique has emerged as a novel approach for precise doping control of two-dimensional materials. Building upon this advancement, this paper aims to demonstrate the effective doping control of transition metal dichalcogenides devices by utilizing the electrochemical ion intercalation method specifically on thick WS ₂layers. The results show that the conductivity is significantly improved, which is about 200 times higher than the original value, alongside the achievement of efficient and reversible control over the photoelectric response performance is effectively and reversibly controlled by manipulating the gate voltage. One of the key findings in this work is the successful demonstration of the reversible cyclic control of the photoelectric response in WS ₂devices through ion intercalation, regulated by the gate voltage. This dynamic control mechanism showcases the potential for finely tuning and tailoring the performance of photoelectric devices made from two-dimensional materials. The ability to achieve reversible control is especially significant as it allows for a versatile range of applications, enabling devices to be adjusted according to specific requirements and operating conditions. The implications of this work extend beyond the immediate findings and present a foundation for future investigation into response control of photoelectric devices constructed by using two-dimensional materials through the utilization of the ion intercalation method. By establishing the feasibility and efficacy of this technique in achieving controlled doping and precise modulation of photoelectric response, researchers can explore its potential applications in various technological domains. Furthermore, this research serves as a stepping stone for developing the advanced doping strategies, enabling the design and fabrication of high-performance devices with enhanced functionalities. In summary, this work showcases the significance of doping control in transition metal dichalcogenide devices and demonstrates the potential of the electrochemical ion intercalation method for achieving precise modulation of their photoelectric response performance. The observed enhancements in electrical conductivity and the ability to reversibly control the photoelectric response highlight the promising prospects of this technique. Ultimately, this work paves the way for future advancements in the field of two-dimensional materials and opens up new way for designing and optimizing photoelectric devices with improved functionality and performance.

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作者及机构信息

通信作者:王冲,chongwang@bit.edu.cn; 王钦生,tsingson@bit.edu.cn

基金项目:国家重点研发计划(批准号: 2020YFA0308800, 2022YFA1206600)、国家自然科学基金(批准号: 12074036)和北京市自然科学基金(批准号: Z190006)资助的课题.

Authors and contacts

Corresponding author:Wang Chong,chongwang@bit.edu.cn; Wang Qin-Sheng,tsingson@bit.edu.cn

Funds:Project supported by the National Key R&D Program of China (Grant Nos. 2020YFA0308800, 2022YFA1206600), the National Natural Science Foundation of China (Grant No. 12074036), and the Natural Science Foundation of Beijing, China (Grant No. Z190006).

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施引文献

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