Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional Transition Metal Sulfides(TDMS）have unique electronic structure and properties, and they are widely used in electronic devices, energy conversion, memory and other fields. In this paper, a two-dimensional ReSe ₂/WSe ₂heterostructure memtransistor was prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10 ¹~ 10 ⁵. Then, the multi-level resistance and on/off ratio of the memtransistor can be controlled by the change of light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in the range of 10 ²~ 10 ⁵by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9×10 ⁴s, the ReSe ₂/WSe ₂heterostructure memtransistor still maintains a switch ratio close to 10 ⁴, indicating the good stability and durability of the device. It demonstrates that the ReSe ₂/WSe ₂memtransistor will be one of potential candidates for the next generation nonvolatile memory applications.