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摘要

超导纳米线单光子探测器(SNSPD)是综合性能最优异的新型单光子探测器之一, 而传统的单像元SNSPD不具备空间分辨力, 且光敏面小, 光学耦合效率存在瓶颈, 因此, 研制大面积阵列器件是自由空间光子探测等应用的关键. 然而, 由于器件光敏面由大量超导纳米线组成, 研发大面积的阵列SNSPD面临工艺复杂、成品率低、制备困难等问题. 本文设计了一种超大面积纳米线阵列结构, 利用电子束抗蚀剂氢倍半硅氧烷(HSQ)曝光后可形成氧化硅电学隔离层的特点, 仅使用简化二维工艺即可完成大阵列SNSPD的制备, 对多层结构的传统立体工艺实现了降维. 器件经过行方向并联测量, 未发现坏点, 成品率高, 且实现了基础的成像功能验证. 此外, 本设计中采用了全超导电极以减少电阻热效应, 并在像元内增设了串并联电阻, 从而均分偏置电流, 同时能够可选地扩展阵列规模. 本工作为超大型阵列 SNSPD 的设计与制备提供了一种思路, 并有望应用于百万像素阵列 SNSPD 的制备, 与高效读出电路结合实现兼备大视场和高灵敏度的焦平面光子探测与成像系统.

关键词:

Abstract

Superconducting nanowire single-photon detector (SNSPD) is one of the most mainstream single-photon detectors at present, which possesses excellent comprehensive performance, including low time jitter, high efficiency, low dark count, and wide spectrum. However, the traditional single-pixel SNSPD suffers a lack of spatial resolution and a small photosensitive surface, which becomes a bottleneck associated with optical coupling efficiency. In addition, a single-pixel detector has no ability to resolving the photon number, whose working speed cannot be further improved due to the existence of dead time. While array devices can make up for the above deficiencies. Therefore, the development of a large-area SNSPD array is the key to free-space photon detection and other applications. In recent years, the relevant researches have been conducted and great progress has been achieved. However, the large-area SNSPD array is facing some intractable problems, including complex process, low yield, and difficult fabrication, owing to the photosensitive surface consisting of a large number of superconducting nanowires. Photons imaging is verified with this device. At present, in the existing studies mainly used is the three-dimensional technology with complicated process steps to fabricate large array SNSPDs. How to simplify the process has become a research focus. In this work, we design an ultra-large area nanowire array structure and propose an innovative plane process. Taking advantage of the property that the electron beam resists HSQ (hydrogen silsesquioxane polymer) forming a silicon oxide electrical isolation layer after exposure, we fabricate a large array SNSPD with a simplified two-dimensional process and realize dimensionality reduction for the traditional three-dimensional process of a multilayer structure. By measurement in parallel, the devices enjoy high yield with no bad points found. In addition, a full-superconducting electrode is adopted in our design to reduce the thermal effect of resistors. We add series and parallel resistors in the pixels to divide the bias current evenly and expand the array scale optionally. At the same time, we also offer the design details of array SNSPDs, the related simulation of hot spots to verify the rationality of the design, the optimization of the preparation conditions of array devices, measurement scheme formulation, and other related work. This work provides an idea for designing and fabricating ultra-large array SNSPD, which is expected to be applied to the fabrication of megapixel array SNSPDs. Combined with an efficient readout circuit, a focal plane photon detection and imaging system with both a large field of view and high sensitivity can be realized.

Keywords:

superconducting nanowire single photon detector/
array device/
process optimization/
plane isolating layer

作者及机构信息

通信作者:张蜡宝,lzhang@nju.edu.cn

基金项目:广东省重点领域研究与发展计划(批准号: 2020B030302001)、国家自然科学基金(批准号: 12033002, 62101240, 62071218, 6207121461801206, 11227904)、国家重点研发计划(批准号: 2017YFA0304002)和江苏省自然科学基金(批准号: BK202010177)资助的课题.

Authors and contacts

Corresponding author:Zhang La-Bao,lzhang@nju.edu.cn

Funds:Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B030302001), the National Natural Science Foundation of China (Grant Nos. 12033002, 62101240, 62071218, 6207121461801206, 11227904), the National Key R&D Program of China (Grant No. 2017YFA0304002), and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK202010177).

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参考文献

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施引文献

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下载: 全尺寸图片幻灯片

下载: 全尺寸图片幻灯片

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