Rectifier component is a core part of a microwave wireless energy transmission system, and the development of new rectifier components is an important research direction in this field. Schottky diodes and field-effect transistors are currently the mainstream rectifier devices, but they have a limited rectification range and cannot achieve a wide-range rectification of both weak energy and medium energy density at the same time. In view of this, in this work proposed and designed is a Ge based p-type single-ended Schottky barrier field effect transistor (Schottky contact at the source and standard p ⁺doping at the drain) for 2.45 GHz microwave wireless energy transmission. Based on this, the Schottky structure of the device is fully utilised and a new diode connection is used in order to realize a dual channel wide range rectification of the trench and source lined Schottky structure opened at different bias voltages. Simulations are carried out by using the Silvaco TCAD software. For a half-wave rectifier circuit with a load of 0.3 pF and 70 kΩ, a wide range from –20 to 24 dBm rectification is achieved, which is 8 dBm wider than the range of Ge field-effect transistors under the same conditions, and the overall rectification efficiency is higher in the range, with a peak rectification efficiency of 57.27% at 16 dBm. The rectification efficiency at –10 dBm weak energy density reaches 6.17%, which is more than 7 times that of Ge FETs under the same conditions.