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微位移驱动器在航天、半导体和工业等领域有着重要应用, 现在市场上大部分采用的是铅基压电陶瓷材料. 出于环境保护和法规限制的考虑, 亟需研发具有优良电致伸缩性能的无铅陶瓷材料. 作为一类 ABO 3型铁电体, (Ba,Ca)(Ti,Zr)O 3(BCTZ) 无铅陶瓷由于具备高压电系数而引发大量关注. 本文借助固相法, 制备了高电致伸缩系数的(Ba 0.85Ca 0.15)(Ti 0.9Zr 0.1)O 3陶瓷(BCTZ). 研究了烧结温度对BCTZ陶瓷结构和电学性能的影响. 研究结果表明: 在室温附近, BCTZ陶瓷晶相结构形成正交(O)-四方(T)两相共存. 烧结温度促进了BCTZ陶瓷致密性改善和晶粒长大. 当烧结温度为1300 ℃时, BCTZ陶瓷晶粒尺寸在1 μm左右,可获得大电致伸缩系数 Q 33(5.84 × 10 –2m 4/C 2), 大约是传统PZT陶瓷的2倍. 这可能是陶瓷晶粒尺寸所产生的表面效应和A—O化学键所具有的强离子性共同作用的结果. 此外, 室温附近BCTZ陶瓷虽处于正交-四方两相相界, 但陶瓷电致伸缩系数 Q 33在测量温度为25—100 ℃范围间具有良好的温度稳定性.
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关键词:
- 无铅陶瓷/
- (Ba,Ca)(Ti,Zr)O3/
- 表面效应/
- 电致伸缩系数
AbstractMicro-displacement actuators have important applications in aerospace, semiconductor, industry and other fields. Now most of the lead-based piezoelectric ceramics are used in the market. In consideration of environmental protection and legal restriction, it is urgent to develop lead-free ceramic materials with excellent electrostrictive properties. As a kind of ABO 3-type ferroelectrics, (Ba,Ca)(Ti,Zr)O 3lead-free ceramics have attracted a lot of attention because of their high piezoelectricity. In this work, (Ba 0.85Ca 0.15)(Ti 0.9Zr 0.1)O 3(BCTZ) ceramics with high electrostrictive coefficient are prepared by the solid-state method. The effects of sintering temperature on the structures and electrical properties of BCTZ ceramics are studied. The results show that the sintering temperature can help to improve density and grain growth of BCTZ ceramic.There are no impurity phases in the BCTZ ceramic systems, and all samples show ABO 3-type perovskite structures. At room temperature, the crystal structure of BCTZ ceramic forms coexistence of orthogonal (O)-tetragonal (T) phase. The dielectric peak of BCTZ ceramic is widened, and the Curie temperature reaches a maximum value of 110 ℃ when T s= 1300 ℃. With the increase of sintering temperature, the dielectric peak of BCTZ ceramic gradually becomes narrowed, and the Curie temperature of ceramic moves toward low temperature.As the sintering temperature is 1300 ℃, the grain size of BCTZ ceramic is 1 μm, the large electrostrictive coefficient Q 33(5.84 × 10 –2m 4/C 2) can be obtained, which is about twice that of traditional PZT ceramic. This may be attributed to combination of the surface effect caused by grain size of BCTZ ceramic with the strong ionic nature of A-O chemical bond. In addition, although BCTZ ceramic has an O-T phase boundary near room temperature, the electrostrictive coefficient Q 33of ceramic has good temperature stability in a range of 25–100 ℃. It shows that the crystal phase and temperature have no effect on the electrostrictive coefficient of BCTZ lead-free ceramic. It provides a new idea for designing the high electrostrictive properties of lead-free piezoelectric ceramics with potential applications.[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] -
Ts/℃ Q33/
(10–2m4·C–2)R-square εr Average grain size/μm 1300 5.84 0.9772 1621 1 1350 3.51 0.9728 2870 2 1400 4.09 0.98768 2836 6 1450 4.27 0.98677 2781 12 1475 4.34 0.98067 2904 — 1500 4.47 0.98348 2776 14 
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T/℃ Ts=1300 ℃
Q33/(10–2m4·C–2)Ts=1475 ℃
Q33/(10–2m4·C–2)25 5.84 4.34 50 6.39 4.62 70 6.61 4.78 85 6.76 4.68 100 6.83 4.29 下载:
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