Antimony selenide (Sb ₂Se ₃) is a promising low-cost and environmentally-friendly semiconductor photovoltaic material. The power conversion efficiency of Sb ₂Se ₃solar cells has been improved to $ \sim $ 10% in the past few years. The carrier recombination transfer dynamics is significant factor that affects the efficiency of Sb ₂Se ₃solar cells. In this work, carrier recombination on the Sb ₂Se ₃surface and carrier transfer dynamics at the CdS/Sb ₂Se ₃heterojunction interface are systematically investigated by surface transient reflectance. According to the evolution of relative reflectance change ${{\Delta }{R}}/{{R}}$ , the carrier thermalization and band gap renormalization time of Sb ₂Se ₃are determined to be in a range from 0.2 to 0.5 ps, and carrier cooling time is estimated to be about 3－4 ps. Our results also demonstrate that both free electron and shallow-trapped electron transfer occur at the Sb ₂Se ₃/CdS interface after photo excitation. Our results present a method of explaining the transient reflectance of Sb ₂Se ₃and enhancing the understanding of carrier kinetics at Sb ₂Se ₃surface and Sb ₂Se ₃/CdS interface.