-
以锑化铯(Cs 3Sb)为代表的碱金属型半导体光阴极具有高量子效率、低电子发射度、光谱响应快等特点, 可作为理想的新型电子发射源. 然而Cs 3Sb中碱金属敏感于含氧气体, 从而导致其结构不稳定, 工作寿命低, 影响电子发射效率. 利用超薄层状的二维材料进行涂层保护Cs 3Sb基底, 有望构建新型高性能光阴极材料, 但目前仍然缺乏适合的二维材料, 能够在保护基底同时维持低功函数( W)和高量子效率. 近年来二维过渡金属碳/氮化物(MXene)材料逐渐成为研究热点, 其灵活引入的悬挂键可以很好地调控MXene材料的结构和电子特性. 本文系统构建了一系列M 2CT 2-Cs 3Sb异质结, 基于第一性原理计算分析了过渡金属元素(M)、原子配比(M/C)、堆垛构型及悬挂键(T)等对其 W的影响. 研究表明, 不同悬挂键类型对构建异质结的 W影响显著, 相对于其他悬挂键(—F/—O/—Cl/—S/—NH), 带有—OH/—OCH 3悬挂键构成的M 2CT 2-Cs 3Sb异质结具有相对较低的 W. 利用差分电荷密度和能级矫正分析解释了异质结 W的变化原因, 即异质结界面电荷重新分布导致界面偶极方向不同, 造成电子逸出的势垒不同. 经过筛选后发现, M 2C(OH) 2(M = V, Ti, Cr)和M 2C(OCH 3) 2(M = Ti, Cr, Nb)结构可以看作理想的涂层材料, 尤其是V 2C(OH) 2-Cs 3Sb ( W= 1.602 eV)和Ti 2C(OCH 3) 2-Cs 3Sb ( W= 1.877 eV). 本研究不仅有助于深入理解MXene-Cs 3Sb异质结电子结构和光学性质, 同时也为高性能光阴极材料的计算筛选提供参考依据.The alkali-based semiconductor cathodes, such as Cs 3Sb that possesses high quantum efficiency, low electron emittance and short spectral response time, can be considered as ideal next-generation electron sources. However, the alkali-based emitters are found to be sensitive to the oxygen gases, which causes a series of problems such as structural instability, short lifetime, and reduced electron emitting efficiency. It is known that the employing of the ultra-thin layered two-dimensional (2D) materials to protect Cs 3Sb basement can promote the development of novel cathodes with excellent performances. However, there is a lack of efficient 2D materials to maintain low work-function ( W) and high quantum efficiency. Recently, the MXene materials which contain layered transitional metal carbides, nitrides and carbonitrides, have attracted great attention particularly in the fields of catalysis and energy. Notably, their flexible types of dangling bonds can lead to tunable structural and electronic properties of MXene-based materials. Here in this work, the MXene-Cs 3Sb heterostructures are modeled by using home-made script and systematically investigated by using first-principle calculations based on density functional theory. Further, the effects of transitional metal element (M), M/C ratio, stacking configuration and types of dangling bonds on the calculated Wof heterostructures are studied. The result indicates that the type of dangling bond shows a more pronounced effect, and the MXene-Cs 3Sb heterostructures with —OCH 3/—OH possess lower W than other dangling bonds. The charge density difference and band alignment analysis are further used to illustrate the underlying reason for the change of W. And it is found that interlayer charge redistribution can result in different surface dipole directions, and thus emitting electrons with varying barriers. After computational screening based on the change of W, the M 2C(OH) 2(M = V, Ti, Cr) and M 2C(OCH 3) 2(M = Ti, Cr, Nb) can be potentially considered as ideal coating materials, and especially for V 2C(OH) 2-Cs 3Sb ( W= 1.602 eV) and Ti 2C(OCH 3) 2-Cs 3Sb ( W= 1.877 eV) with significantly reduced W. Finally, we believe that this work can not only give an in-depth insight into the electronic and optical properties of Cs 3Sb-MXene heterostructures, but also provide the useful criteria for the computational screening of superior cathodes. Meanwhile, we further urgently expect the cooperative efforts from an experimental perspective to demonstrate the superior performances of those screened MXene-Cs 3Sb photocathodes for practical applications.
-
Keywords:
- alkali-based cathodes/
- two-dimensional materials/
- heterostructures/
- first-principle theory
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] -
M2CT2 M2CT2-Cs3Sb in Model-1 M2CT2-Cs3Sb in Model-2 W0/eV W1/eV ∆W1/eV Eb1/(meV·Å–2) W2/eV ∆W2/eV Eb2/(meV·Å–2) Sc2CO2 5.484 3.547 –1.937 –4.161 2.096 –3.388 –5.705 Ta2CS2 5.383 4.490 –0.893 –6.122 5.076 –0.307 –5.364 Zr2C(OH)2 1.701 2.064 0.363 –1.701 2.078 0.377 –1.778 —OH M2C(OH)2-Cs3Sb —OCH3 M2C(OCH3)2-Cs3Sb W0/eV W1/eV ∆W1/eV Eb1/(meV·Å–2) W0/eV W2/eV ∆W2/eV Eb2/(meV·Å–2) Sc2CT2 1.549 1.969 0.05 –2.036 2.869 2.025 0.106 –2.101 Ti2CT2 1.642 1.897 –0.022 –2.235 1.571 1.877 –0.042 –1.678 V2CT2 1.743 1.602 –0.317 –2.065 1.88 1.965 0.046 –1.658 Cr2CT2 1.441 1.813 –0.106 –1.848 2.088 1.896 –0.023 –2.418 Y2CT2 1.348 2.096 0.177 –3.714 2.404 2.118 0.199 –1.696 Zr2CT2 1.700 2.047 0.128 –1.783 1.267 2.003 0.084 –1.300 Nb2CT2 2.012 2.126 0.207 –2.941 1.090 1.904 –0.015 –1.265 Mo2CT2 2.153 1.974 0.055 –1.934 1.610 1.961 0.042 –2.602 Hf2CT2 2.018 2.376 0.457 –3.441 1.582 1.964 0.045 –1.219 Ta2CT2 2.511 2.492 0.573 –2.497 1.375 1.952 0.033 –1.359 W2CT2 2.962 2.599 0.680 –0.600 2.732 1.946 0.027 –1.456 V2CT2 V2CT2-Cs3Sb EA/eV W/eV ∆W/eV Eb/(meV·Å–2) V2C 4.637 4.525 2.606 –5.846 V2CF2 5.542 5.373 3.454 –7.515 V2CO2 6.787 6.441 4.522 –12.23 V2C(OH)2 1.743 1.602 –0.317 –2.065 V2CS2 4.476 4.638 2.719 –5.140 V2CCl2 5.551 5.085 3.166 –7.342 V2C(OCH3)2 1.88 1.965 0.046 –1.659 V2C(NH)2 2.629 2.578 0.659 –3.062 -
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74]
计量
- 文章访问数:5465
- PDF下载量:113
- 被引次数:0