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摘要

目前, 低维材料是热电领域研究的热点, 因为块体材料低维化后热电性能会得到显著的改善. 块体材料低维化有很多方法, 本文基于半导体微加工和聚焦离子束技术制备了尺寸可控的Si微/纳米带, 并通过微悬空结构详细研究了不同尺寸Si微/纳米带的热电性能. 实验发现: 随着Si微/纳米带宽度的减小, 材料的热导率发生了显著的降低, 从体硅的148 W/(m·K)降低到17.75 W/(m·K)(800 nm); 材料的Seebeck系数低于相应的体Si值. 热导率的降低主要来源于声子边界散射的增加, 这显著抑制了Si材料中声子的传输行为, 从而影响热能的传输和转换. 在373 K时, 800 nm宽的Si微/纳米带的 ZT值约达到了0.056, 与体硅相比增大了约6倍. 聚焦离子束加工技术为将来Si材料提高热电性能提供了新的制备方案, 这种技术也可以应用于其他材料低维化的制备.

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Abstract

Currently, low-dimensional materials are a hot spot in the field of thermoelectric research, because the thermoelectric properties will be significantly improved after the low-dimensionalization of bulk materials. In a bulk material, its thermoelectric figure of merit ZTvalue cannot be increased by changing a single parameter, because the parameters of the material are interrelated to each other, which is not conducive to the research of internal factors and thus limiting the efficiency of thermoelectric material, but thermoelectric material on a micro-nano scale is more flexible to adjust its thermoelectric figure of merit ZTvalue. There are many different kinds of methods of implementing the low-dimensionalization of bulk materials. In this paper, size-controllable Si micro/nanobelts are prepared based on semiconductor micromachining and focused ion beam (FIB) technology, and the thermoelectric properties of Si micro/nanobelts of different sizes are comprehensively studied by the micro-suspension structure method. In this experiment, we find that the conductivity of doped Si micro/nanobelt is significantly better than that of bulk Si material, that as the width of the Si micro/nanobelt decreases, the thermal conductivity of the material decreases significantly, from 148 W/(m·K) of bulk silicon to 17.75 W/(m·K) of 800 nm wide Si micro-nanobelt, that the Seebeck coefficient of the material is lower than that of the corresponding bulkmaterials. The decrease of thermal conductivity is mainly due to the boundary effect caused by the size reduction, which leads the phonon boundary scattering to increase, and thus significantly inhibiting the behavior of phonon transmission in the Si material, thereby further affecting the transmission and conversion of thermal energy in the material. At 373 K, the maximum ZTvalue of the 800 nm wide Si micro/nanobelt reaches ～0.056, which is about 6 times larger than that of bulk silicon. And as the width of the Si micronanobelt is further reduced, the thermoelectric figure of merit ZTvalue will be further improved, making Si material an effective thermoelectric material. The FIB processing technology provides a new preparation scheme for improving the thermoelectric performances of Si materials in the future, and this manufacturing technology can also be applied to the low-dimensional preparation of other materials.

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作者及机构信息

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通信作者:王晓东,xdwang@semi.ac.cn

基金项目:国家重点研发计划(批准号: 2019YFB1503602, 2018YFB1107502)、中国科学院战略性先导科技专项(B类)(批准号: XDB43020500)和中国科学院科研仪器设备研制项目(批准号: GJJSTD20200006)资助的课题

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Corresponding author:Wang Xiao-Dong,xdwang@semi.ac.cn

Funds:Project supported by the National Key R&D Program of China (Grant Nos. 2019YFB1503602, 2018YFB1107502), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB43020500), and the Development Program of Scientific Research Instruments and Equipment of the Chinese Academy of Sciences, China (Grant No. GJJSTD20200006)

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施引文献

下载: 全尺寸图片幻灯片

	宽度/nm	厚度/nm	长度/µm
Sample 1	2000	220	5
Sample 2	800	220	3

下载: 导出CSV

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